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This article presents the first demonstration of a broadband GaN‐on‐Si power amplifier module integrated in a low temperature cofired ceramic (LTCC) technology.The active device of the amplifier is a low cost Si‐based AlGaN/GaN high electron mobility transistor. Both the input and the output matching circuits were implemented with fully embedded passives in an LTCC substrate. Measured results show that the prototype module can exhibit an output power of 28.9 dBm and a drain efficiency of 44% at 2.9 GHz. Drain efficiency over 40% is achieved across 2.9–3.3 GHz, together with an output return loss of better than −13 dB. The major advantage of using a system‐in‐package approach with LTCC technology is the dramatic cost reduction compared with a monolithic microwave integrated circuit and the size reduction compared with a hybrid PCB approach. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol …