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Si self-diffusion in thermally grown Si O 2 near the Si O 2∕ Si interface during thermal oxidation process was studied using isotopic heterostrucutures (Si nat O 2∕ Si 28) as a function of the oxidation temperature, the oxidation time, and the fraction of oxygen in the ambient gas. The Si self-diffusivity near the Si O 2∕ Si interface during oxidation was found to be larger than the thermal Si self-diffusivity by more than one order of magnitude. This enhancement indicates that Si species are emitted from the Si O 2∕ Si interface and diffused into Si O 2 during oxidation, as has been predicted by recent theoretical studies.