作者
Jeremy Martin, S Filipiak, T Stephens, F Huang, M Aminpur, J Mueller, E Demircan, L Zhao, J Werking, C Goldberg, S Park, T Sparks, C Esber
发表日期
2002/6/5
研讨会论文
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No. 02EX519)
页码范围
42-44
出版商
IEEE
简介
This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of SiCN improves interconnect performance by virtue of its lower dielectric constant as compared to silicon nitride, and through changes to the process integration made possible by the improved etch selectivity and good copper interface properties.
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