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We describe the chemical synthesis of binderless and surfactant free CuO films for pseudocapacitive applications. Nanosheet-like and nanorod-like CuO films are deposited on indium tin oxide (ITO) substrates using the successive ionic layer adsorption and reaction (SILAR) approach. The nanostructured CuO shows uniform surface morphology and uniform pore distribution with average grain sizes in the range 30 − 50 nm and average pore size of 12.0 and 12.5 nm for 10 and for 40-cycles respectively, as estimated from AFM imaging. The electrochemical properties are characterized by cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS). The highest specific capacitance of 566.33 Fg⁻¹ is obtained for as low as 10-cycle film at a scan rate of 5mVs⁻¹. The long term stability tests by continuous GCD, indicates that there is no degradation after 1000 …