作者
H Kohlstedt, A Petraru, K Szot, A Rüdiger, P Meuffels, H Haselier, R Waser, V Nagarajan
发表日期
2008/2/11
期刊
Applied Physics Letters
卷号
92
期号
6
出版商
AIP Publishing
简介
We present investigations on the resistive switching effect in Sr Ru O 3∕ Pb Zr 0.2 Ti 0.8 O 3∕ Pt ferroelectric capacitors. Using a conductive atomic force microscope, the out-of-plane piezoelectric response and the capacitive and resistive current were simultaneously measured as a function of applied bias voltage. We observed two independent switching phenomena, one attributed to the ferroelectric switching process and the other to resistive switching. We show that I-V curves alone are not sufficient in ferroelectric materials to clarify the underlying switching mechanism and must be used with sufficient caution.
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