发明者
Atif Iqbal, Shima Sadaf, Nasser Al Emadi, Mahajan Sagar Bhaskar, Mohammad Meraj
发表日期
2022/4/26
专利局
US
专利号
US 11,316,430 B2
专利申请号
16/834,650
简介
Boost (SI-B) converter is proposed with reduced voltage stress across active switches to achieve higher output volt age. The SI-B converter configuration is transformer-less and derived by replacing the diode of the classical switched inductor structure with an active switch. As a result, com pared to the existing transformer-less high step-up converter or switched inductor boost converter, certain embodiments have the merit that the switch voltage stress across the active switch is less than the output voltage.
学术搜索中的文章
A Iqbal, S Sadaf, ALE Nasser, MS Bhaskar, M Meraj - US Patent 11,316,430, 2022