查看文章

We succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO (Fe)/Nb: STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO (Fe) bulk and to the depletion layer of the Pt/STO (Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive “on” and “off” states, we propose that the resistance of the STO (Fe)/Nb: STO interface locally changes during the switching process.

For realizing a new solid-state memory technology, there is a strong interest in the application of transition metal oxides. 1 Even though the exact microscopic mechanisms for bipolar resistive switching in these oxides are still …