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Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising non-volatile memory (NVM) technology due to its superior performance in terms of power consumption, write/read speed, endurance, and scalability. However, the reliability of STT-MRAM is affected by the process variation and thermal fluctuation, leading to both the write errors and read errors. Hence, it is important to develop error correction coding schemes to correct the memory cell errors and improve the system reliability. In this paper, we propose, for the first time, the design and optimization of polar codes for the STT-MRAM channel. In particular, as the STT-MRAM channel is asymmetric by nature, we first adopt an approach to symmetrize the channel so as to facilitate the design of effective polar codes. We then apply the density evolution method to construct polar codes and optimize their performance for the STT-MRAM …