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CdS/CdTe/Au thin film solar cells have been fabricated on different transparent conducting oxide (TCO) substrates/front contacts to study the influence of these different TCOs on the performance of the devices. The TCOs used were ZnO, ZnO:Al and SnO₂:F. Under dark condition, all three device structures of the type glass/TCO/n-CdS/n-CdTe/Au n–n heterojunction + Schottky barrier, show interesting rectifying behaviors with rectification factors (RF) in the range (10^2.5—10^5.0), Schottky barrier heights (Φ _B) greater than (0.69–0.81) eV, diode ideality factors (n) in the range (1.85–2.12), reverse saturation current densities (J ₀) in the range (3.18 × 10⁻⁶–3.18 × 10⁻⁸) A cm⁻², series resistances (R _s) in the range (507–1114) Ω and shunt resistances (R _sh) in the range (0.84–271) MΩ. The device structures glass/SnO₂:F/n-CdS/n-CdTe/Au and glass/FTO/ZnO:Al/n-CdS/n-CdTe/Au show the best performance with …