作者
SG Bishop, JP Hadden, R Hekmati, JK Cannon, WW Langbein, AJ Bennett
发表日期
2022/3/14
期刊
Applied Physics Letters
卷号
120
期号
11
出版商
AIP Publishing
简介
Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3±0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens.
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SG Bishop, JP Hadden, R Hekmati, JK Cannon… - Applied Physics Letters, 2022