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We have developed a novel epitaxial nickel-aluminide silicide (NiSi _2-x Al _x ) to reduce the Schottky-Barrier height (SBH) and series resistance in n-channel MuGFETs with dopant-segregated Schottky-Barrier source/drain (DSS). 10% substitutional incorporation of Al in the Si matrix at the silicide-Si interface leads to a 37% reduction in the intrinsic SBH of nickel silicide. A further 42% effective reduction in the DSS SBH was attained with the combination of NiSi _2-x Al _x and DSS technology. Saturation drive current enhancement of 94% for NiSi _2-x Al _x DSS MuGFETs over NiSi DSS MuGFETs was achieved, attributed to SBH lowering, series resistance reduction and possibly silicide strain effects. As a result, an excellent drive current of 882 μA/μm at V _GS -V _T =V _DS = 1.2 V was achieved for NiSi _2-x Al _x DSS MuGFETs with 55 nm gate length.