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The present work investigates the suitability of Ge junctionless (JL) transistors for subthreshold logic applications. Considering that Ge exhibits a higher degree of short channel effects due to its higher permittivity, a semi-analytical model is first developed to capture the potential distribution and electron concentration in double gate (DG) Ge JL transistors with underlap regions for subthreshold operation. The model accurately predicts threshold voltage, drain-induced barrier lowering and subthreshold swing in Ge-based DG JL transistors. The work is extended to evaluate the subthreshold drain current for n-type and p-type DG Ge JL devices and the approach is adapted to extract three key technology-dependent parameters for ultra-low-power (ULP)(subthreshold) operation. The technology-dependent parameters are then utilized to evaluate key performance metrics of a subthreshold inverter. The upper and lower …