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The current transport across the graphene/ interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that the Schottky barrier height (SBH) of is lower than the SBH of . This result is discussed in terms of the Fermi-level pinning above the Dirac point in EG due to the presence of positively charged states at the interface between the Si face of and the carbon-rich buffer layer, which is the precursor for EG formation.