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Recently, giant carrier mobility μ (>10⁵ cm² V^–1 s^–1) and micrometer electron mean free path (l) have been measured in suspended graphene or in graphene encapsulated between inert and ultraflat BN layers. Much lower μ values (10000–20000 cm² V^–1 s^–1) are typically reported in graphene on common substrates (SiO₂, SiC) used for device fabrication. The debate on the factors limiting graphene electron mean free path is still open with charged impurities (CI) and resonant scatterers (RS) indicated as the most probable candidates. As a matter of fact, the inhomogeneous distribution of such scattering sources in graphene is responsible of nanoscale lateral inhomogeneities in the electronic properties, which could affect the behavior of graphene nanodevices. Hence, high resolution two-dimensional (2D) mapping of their density is very important. Here, we used scanning capacitance microscopy/spectroscopy …