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Indium-zinc-oxide thin-film transistors (TFTs) with back-channel-etch (BCE) structure were demonstrated. A stacked structure of Mo/Al/Mo was used as the source/drain electrodes and patterned by a wet-etch-method. Good etching profile with few residues on the channel was obtained. The TFT showed a field effect mobility of 11.3 cm 2 V− 1 s− 1 and a sub-threshold swing of 0.24 V/decade. The performance of this kind of TFT was better than that of the TFT with etch-stopper-layer structure, which was proved to be due to the lower contact resistance. The BCE-TFTs fabricated with this method have good prospect due to the advantage of low cost.