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In this paper, a novel GaN-AlxGa1− xN-GaN vertically stacked cantilever has been proposed to function as an ultraviolet (UV) photodetector. The proposed cantilever has been modeled in COMSOL to compute the Fresnel coefficients such as absorptance, reflectance, and transmittance in the wavelength range of 300 nm to 500 nm. Using the wave optics module, the Fresnel coefficients are computed in the given wavelength range. Simulations are performed for two different cases. In the first case, the effect of bottom GaN layer thickness variation on the Fresnel coefficients of the cantilever has been studied. The thickness of the bottom GaN layer is varied from 0.1 to 1 µm with a step size of 0.1 µm. In the second case, the effect of Al alloy composition in AlxGa1− xN on the Fresnel coefficients has been studied. The Al% in AlxGa1− xN has been varied from 19% to 78.5%.