A high-efficiency 142–182-GHz SiGe BiCMOS power amplifier with broadband slotline-based power combining technique X Li, W Chen, S Li, Y Wang, F Huang, X Yi, R Han, Z Feng IEEE Journal of Solid-State Circuits 57 (2), 371-384, 2021 | 33 | 2021 |
A 250–310 GHz power amplifier with 15-dB peak gain in 130-nm SiGe BiCMOS process for terahertz wireless system X Li, W Chen, P Zhou, Y Wang, F Huang, S Li, J Chen, Z Feng IEEE Transactions on Terahertz Science and Technology 12 (1), 1-12, 2021 | 24 | 2021 |
A 140-GHz FMCW TX/RX-antenna-sharing transceiver with low-inherent-loss duplexing and adaptive self-interference cancellation X Chen, X Yi, MIW Khan, X Li, W Chen, J Zhu, Y Yang, KE Kolodziej, ... IEEE Journal of Solid-State Circuits 57 (12), 3631-3645, 2022 | 15 | 2022 |
A 140GHz transceiver with integrated antenna, inherent-low-loss duplexing and adaptive self-interference cancellation for FMCW monostatic radar X Chen, MIW Khan, X Yi, X Li, W Chen, J Zhu, Y Yang, KE Kolodziej, ... 2022 IEEE International Solid-State Circuits Conference (ISSCC) 65, 80-82, 2022 | 15 | 2022 |
A 110-to-130 ghz sige bicmos doherty power amplifier with a slotline-based power combiner X Li, W Chen, H Wu, S Li, X Yi, R Han, Z Feng IEEE Journal of Solid-State Circuits 57 (12), 3567-3581, 2022 | 14 | 2022 |
A 110-to-130GHz SiGe BiCMOS Doherty power amplifier with slotline-based power-combining technique achieving> 22dBm saturated output power and> 10% power back-off efficiency X Li, W Chen, S Li, H Wu, X Yi, R Han, Z Feng 2022 IEEE International Solid-State Circuits Conference (ISSCC) 65, 316-318, 2022 | 14 | 2022 |
A 210-GHz magnetless nonreciprocal isolator in 130-nm SiGe BiCMOS based on resistor-free unidirectional ring resonators Y Wang, W Chen, X Li IEEE Microwave and Wireless Components Letters 30 (5), 524-527, 2020 | 11 | 2020 |
A 160 GHz high output power and high efficiency power amplifier in a 130-nm SiGe BiCMOS technology X Li, W Chen, Y Wang, Z Feng 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 199-202, 2020 | 7 | 2020 |
A 5.1 dBm 127–162 GHz frequency sextupler with broadband compensated transformer-based baluns in 22nm FD-SOI CMOS S Li, W Chen, X Li, Y Wang 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 315-318, 2022 | 6 | 2022 |
180 GHz high‐gain cascode power amplifier in a 130 nm SiGe process X Li, W Chen, Y Wang, Z Feng Electronics Letters 56 (10), 498-501, 2020 | 5 | 2020 |
Highly efficient terahertz beam-steerable integrated radiator based on tunable boundary conditions Y Wang, W Chen, X Li, J Chen, L Chen, F Huang, S Li, Z Wang IEEE Journal of Solid-State Circuits 57 (5), 1314-1331, 2022 | 4 | 2022 |
A 160 GHz high output power and high DC-to-RF efficiency fundamental oscillator in a 130-nm sige BiCMOS process X Li, W Chen, Y Wang, Z Feng 2020 50th European Microwave Conference (EuMC), 1159-1162, 2021 | 4 | 2021 |
24.3 A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7 dBm Output Power S Li, X Li, H Wu, W Chen 2023 IEEE International Solid-State Circuits Conference (ISSCC), 23-25, 2023 | 3 | 2023 |
300-335 GHz highly efficient beam-steerable radiator based on tunable boundary conditions Y Wang, W Chen, X Li, J Chen, L Chen, S Li 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 51-54, 2021 | 2 | 2021 |
Analysis and Design of Broadband Balance-Compensated Transformer Baluns for Silicon-Based Millimeter-Wave Circuits S Li, B Xia, X Li, Y Wang, X Liu, W Chen IEEE Transactions on Circuits and Systems I: Regular Papers 70 (8), 3103-3116, 2023 | 1 | 2023 |
305-325 GHz Non-Reciprocal Isolator Based on Peak-Control Gain-boosting Magnetless Non-reciprocal Metamaterials Y Wang, W Chen, X Li, S Li, P Zhou 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 47-50, 2021 | 1 | 2021 |
A Wideband 28 GHz Fully-Integrated Power Amplifier in 65 nm CMOS Technology X Li, W Chen, J Zhou, Z Feng 2018 International Conference on Microwave and Millimeter Wave Technology …, 2018 | 1 | 2018 |
A 160-GHz FMCW Radar Transceiver with Slotline-based High Isolation Full-duplexer in 130nm SiGe BiCMOS Process X Li, H Wu, S Li, W Chen, Z Feng 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 249-252, 2023 | | 2023 |
A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7 dBm Output Power. S Li, X Li, H Wu, W Chen ISSCC, 366-367, 2023 | | 2023 |
A 0.41-THz Coherent Harmonic Radiation Array Based on Mode-dependent Boundaries Y Wang, W Chen, X Li, Z Wang, J Chen, L Chen 2021 IEEE International Workshop on Electromagnetics: Applications and …, 2021 | | 2021 |