关注
Jae-Hoon Han
标题
引用次数
引用次数
年份
Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka
Nature Photonics 11 (8), 486-490, 2017
2242017
High‐performance circularly polarized light‐sensing near‐infrared organic phototransistors for optoelectronic cryptographic primitives
H Han, YJ Lee, J Kyhm, JS Jeong, JH Han, MK Yang, KM Lee, Y Choi, ...
Advanced Functional Materials 30 (52), 2006236, 2020
642020
Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation
DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ...
Nanoscale 11 (48), 23139-23148, 2019
532019
III–V/Si hybrid MOS optical phase shifter for Si photonic integrated circuits
M Takenaka, JH Han, F Boeuf, JK Park, Q Li, CP Ho, D Lyu, S Ohno, ...
Journal of Lightwave Technology 37 (5), 1474-1483, 2019
522019
Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials
SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ...
IEEE Journal of the Electron Devices Society 6, 579-587, 2018
362018
Verification of Ge-on-insulator structure for a mid-infrared photonics platform
SH Kim, JH Han, JP Shim, H Kim, WJ Choi
Optical Materials Express 8 (2), 440-451, 2018
352018
Quantitative evaluation of energy distribution of interface trap density at MoS2MOS interfaces by the Terman method
M Takenaka, Y Ozawa, J Han, S Takagi
2016 IEEE International Electron Devices Meeting (IEDM), 5.8. 1-5.8. 4, 2016
342016
Ultra-lightweight, flexible InGaP/GaAs tandem solar cells with a dual-function encapsulation layer
TS Kim, HJ Kim, DM Geum, JH Han, IS Kim, N Hong, GH Ryu, JH Kang, ...
ACS Applied Materials & Interfaces 13 (11), 13248-13253, 2021
322021
Heterogeneous CMOS photonics based on SiGe/Ge and III–V semiconductors integrated on Si platform
M Takenaka, Y Kim, J Han, J Kang, Y Ikku, Y Cheng, J Park, M Yoshida, ...
IEEE Journal of Selected Topics in Quantum Electronics 23 (3), 64-76, 2017
302017
Ultra-power-efficient 2× 2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter
Q Li, JH Han, CP Ho, S Takagi, M Takenaka
Optics express 26 (26), 35003-35012, 2018
292018
Benchmarking Si, SiGe, and III–V/Si hybrid SIS optical modulators for datacenter applications
F Boeuf, JH Han, S Takagi, M Takenaka
Journal of lightwave technology 35 (18), 4047-4055, 2017
292017
Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators
JH Han, M Takenaka, S Takagi
Japanese Journal of Applied Physics 55 (4S), 04EC06, 2016
292016
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling
JH Han, R Zhang, T Osada, M Hata, M Takenaka, S Takagi
Microelectronic engineering 109, 266-269, 2013
282013
Reduction in interface trap density of Al2O3/SiGe gate stack by electron cyclotron resonance plasma post-nitridation
J Han, R Zhang, T Osada, M Hata, M Takenaka, S Takagi
Applied Physics Express 6 (5), 051302, 2013
282013
Simulation Study on the Design of Sub- Non-Hysteretic Negative Capacitance FET Using Capacitance Matching
P Bidenko, S Lee, JH Han, JD Song, SH Kim
IEEE Journal of the Electron Devices Society 6, 910-921, 2018
272018
Heterogeneously-integrated optical phase shifters for next-generation modulators and switches on a silicon photonics platform: A review
Y Kim, JH Han, D Ahn, S Kim
Micromachines 12 (6), 625, 2021
232021
3D stackable synaptic transistor for 3D integrated artificial neural networks
SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ...
ACS applied materials & interfaces 12 (6), 7372-7380, 2020
222020
Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs
S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ...
IEEE Journal of the Electron Devices Society 7, 869-877, 2019
222019
Comprehensive understanding of the HZO-based n/pFeFET operation and device performance enhancement strategy
SH Kuk, SM Han, BH Kim, SH Baek, JH Han, S Kim
2021 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2021
192021
Extremely high modulation efficiency iii-v/Si hybrid MOS optical modulator fabricated by direct wafer bonding
JH Han, M Takenaka, S Takagi
Electron Devices Meeting (IEDM), 2016 IEEE International, 25.5. 1-25.5. 4, 2016
192016
系统目前无法执行此操作,请稍后再试。
文章 1–20