Extremely low room-temperature threshold current density diode lasers using InAs dots in In0. 15Ga0. 85As quantum well GT Liu, A Stintz, H Li, KJ Malloy, LF Lester Electronics Letters 35 (14), 1163-1165, 1999 | 648 | 1999 |
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes TC Newell, DJ Bossert, A Stintz, B Fuchs, KJ Malloy, LF Lester IEEE Photonics Technology Letters 11 (12), 1527-1529, 1999 | 383 | 1999 |
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes LF Lester, A Stintz, H Li, TC Newell, EA Pease, BA Fuchs, KJ Malloy IEEE Photonics Technology Letters 11 (8), 931-933, 1999 | 284 | 1999 |
Room-temperature operation of InAs quantum-dash lasers on InP [001] RH Wang, A Stintz, PM Varangis, TC Newell, H Li, KJ Malloy, LF Lester IEEE Photonics Technology Letters 13 (8), 767-769, 2001 | 280 | 2001 |
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ... Applied Physics Letters 90 (17), 2007 | 250 | 2007 |
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes PG Eliseev, H Li, A Stintz, GT Liu, TC Newell, KJ Malloy, LF Lester Applied Physics Letters 77 (2), 262-264, 2000 | 240 | 2000 |
Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers X Huang, A Stintz, H Li, LF Lester, J Cheng, KJ Malloy Applied Physics Letters 78 (19), 2825-2827, 2001 | 222 | 2001 |
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ... Applied Physics Letters 91 (24), 2007 | 215 | 2007 |
The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures GT Liu, A Stintz, H Li, TC Newell, AL Gray, PM Varangis, KJ Malloy, ... IEEE Journal of Quantum Electronics 36 (11), 1272-1279, 2000 | 203 | 2000 |
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure A Stintz, GT Liu, H Li, LF Lester, KJ Malloy IEEE Photonics Technology Letters 12 (6), 591-593, 2000 | 196 | 2000 |
Low-threshold quantum dot lasers with 201nm tuning range PM Varangis, H Li, GT Liu, TC Newell, A Stintz, B Fuchs, KJ Malloy, ... Electronics Letters 36 (18), 1, 2000 | 184 | 2000 |
Single-mode GaN nanowire lasers Q Li, JB Wright, WW Chow, TS Luk, I Brener, LF Lester, GT Wang Optics express 20 (16), 17873-17879, 2012 | 181 | 2012 |
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers PG Eliseev, H Li, T Liu, TC Newell, LF Lester, KJ Malloy IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 135-142, 2001 | 144 | 2001 |
Nonalloyed Ti/Al ohmic contacts to n‐type GaN using high‐temperature premetallization anneal LF Lester, JM Brown, JC Ramer, L Zhang, SD Hersee, JC Zolper Applied physics letters 69 (18), 2737-2739, 1996 | 139 | 1996 |
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor T Henderson, MI Aksun, CK Peng, H Morkoc, PC Chao, PM Smith, ... IEEE electron device letters 7 (12), 649-651, 1986 | 128 | 1986 |
Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp H Su, LF Lester Journal of Physics D: Applied Physics 38 (13), 2112, 2005 | 126 | 2005 |
High-performance InAs quantum-dot lasers near 1.3 μm Y Qiu, P Gogna, S Forouhar, A Stintz, LF Lester Applied Physics Letters 79 (22), 3570-3572, 2001 | 124 | 2001 |
Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3-InAs–GaAs Quantum-Dot Lasers F Grillot, B Dagens, JG Provost, H Su, LF Lester IEEE Journal of Quantum Electronics 44 (10), 946-951, 2008 | 122 | 2008 |
Ultra-low-noise cryogenic high-electron-mobility transistors KHG Duh, MW Pospieszalski, WF Kopp, P Ho, AA Jabra, PC Chao, ... IEEE transactions on electron devices 35 (3), 249-256, 1988 | 104 | 1988 |
QD Lasers US Patent 20,020,114,367, 0 | 100* | |