| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 239 | 2013 |
| Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ... Semiconductor Science and Technology 29 (11), 113001, 2014 | 228 | 2014 |
| Analog circuit optimization system based on hybrid evolutionary algorithms B Liu, Y Wang, Z Yu, L Liu, M Li, Z Wang, J Lu, FV Fernández INTEGRATION, the VLSI journal 42 (2), 137-148, 2009 | 198 | 2009 |
| A new small-signal modeling and extraction method in AlGaN/GaN HEMTs J Lu, Y Wang, L Ma, Z Yu Solid-State Electronics 52 (1), 115-120, 2008 | 117 | 2008 |
| Spatially-resolved spectroscopic measurements of Ec− 0.57 eV traps in AlGaN/GaN high electron mobility transistors DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ... Applied Physics Letters 102 (19), 193509, 2013 | 116 | 2013 |
| Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ... Applied Physics Letters 106 (18), 183502, 2015 | 109 | 2015 |
| Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High DJ Denninghoff, S Dasgupta, J Lu, S Keller, UK Mishra Electron Device Letters, IEEE 33 (6), 785-787, 2012 | 80 | 2012 |
| Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures B Mazumder, SW Kaun, J Lu, S Keller, UK Mishra, JS Speck Applied Physics Letters 102 (11), 111603, 2013 | 79 | 2013 |
| Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors R Yeluri, X Liu, BL Swenson, J Lu, S Keller, UK Mishra Journal of Applied Physics 114 (8), 083718, 2013 | 50 | 2013 |
| Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition X Liu, J Kim, R Yeluri, S Lal, H Li, J Lu, S Keller, B Mazumder, JS Speck, ... Journal of Applied Physics 114 (16), 164507, 2013 | 42 | 2013 |
| N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒ max D Denninghoff, J Lu, M Laurent, E Ahmadi, S Keller, UK Mishra Device Research Conference (DRC), 2012 70th Annual, 151-152, 2012 | 41 | 2012 |
| Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors X Liu, R Yeluri, J Lu, UK Mishra Journal of electronic materials 42 (1), 33-39, 2013 | 40 | 2013 |
| N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz f T and 405 GHz f max D Denninghoff, J Lu, E Ahmadi, S Keller, UK Mishra Device Research Conference (DRC), 2013 71st Annual, 197-198, 2013 | 39 | 2013 |
| Engineering the (In, Al, Ga) N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors J Lu, X Zheng, M Guidry, D Denninghoff, E Ahmadi, S Lal, S Keller, ... Applied Physics Letters 104 (9), 092107, 2014 | 37 | 2014 |
| Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm S Dasgupta, J Lu, JS Speck, UK Mishra Electron Device Letters, IEEE 33 (6), 794-796, 2012 | 36 | 2012 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ... Applied Physics Letters 103 (5), 053509, 2013 | 35 | 2013 |
| Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz S Dasgupta, J Lu, JS Speck, UK Mishra Electron Device Letters, IEEE 33 (7), 961-963, 2012 | 32 | 2012 |
| Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition T Fujiwara, R Yeluri, D Denninghoff, J Lu, S Keller, JS Speck, ... Applied physics express 4 (9), 096501, 2011 | 32 | 2011 |
| Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition J Lu, D Denninghoff, R Yeluri, S Lal, G Gupta, M Laurent, S Keller, ... Applied Physics Letters 102 (23), 232104, 2013 | 29 | 2013 |
| Anomalous output conductance in N-polar GaN high electron mobility transistors M Hoi Wong, U Singisetti, J Lu, JS Speck, UK Mishra Electron Devices, IEEE Transactions on 59 (11), 2988-2995, 2012 | 29 | 2012 |
Steven DenBaarsProfessor of Materials, University of California Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
