| Super‐gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge‐thinning design HH Lin, SC Lee Applied physics letters 47 (8), 839-841, 1985 | 184 | 1985 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses YT Dai, JC Fan, YF Chen, RM Lin, SC Lee, HH Lin Journal of applied physics 82 (9), 4489-4492, 1997 | 158 | 1997 |
| Built-in electric field and surface Fermi level in InP surface-intrinsic structures by modulation spectroscopy JS Hwang, WY Chou, MC Hung, JS Wang, HH Lin Journal of applied physics 82 (8), 3888-3890, 1997 | 140 | 1997 |
| Nonlinear refractive‐index and two photon‐absorption near half the band gap in AlGaAs A Villeneuve, CC Yang, GI Stegeman, CH Lin, HH Lin Applied physics letters 62 (20), 2465-2467, 1993 | 111 | 1993 |
| AlGaAs below half bandgap: the silicon of nonlinear optical materials GI Stegeman, A Villeneuve, J Kang, JS Aitchison, CN Ironside, ... International Journal of Nonlinear Optical Physics 3 (03), 347-371, 1994 | 107 | 1994 |
| Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor SC Lee, JN Kau, HH Lin Applied physics letters 45 (10), 1114-1116, 1984 | 89 | 1984 |
| Investigation of HfO2 thin films on Si by X-ray photoelectron spectroscopy, Rutherford backscattering, grazing incidence X-ray diffraction and variable angle spectroscopic … X Luo, Y Li, H Yang, Y Liang, K He, W Sun, HH Lin, S Yao, X Lu, L Wan, ... Crystals 8 (6), 248, 2018 | 79 | 2018 |
| Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers FY Chang, CC Wu, HH Lin Applied physics letters 82 (25), 4477-4479, 2003 | 74 | 2003 |
| Band gap reduction in InAsN alloys DK Shih, HH Lin, LW Sung, TY Chu, TR Yang Japanese journal of applied physics 42 (2R), 375, 2003 | 72 | 2003 |
| Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers LW Sung, HH Lin Applied Physics Letters 83 (6), 1107-1109, 2003 | 66 | 2003 |
| Magnetic-field-induced delocalization in center-doped G a A s/A l x Ga 1− x As multiple quantum wells CH Lee, YH Chang, YW Suen, HH Lin Physical Review B 58 (16), 10629, 1998 | 66* | 1998 |
| Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition H Yang, Y Qian, C Zhang, DS Wuu, DN Talwar, HH Lin, JF Lee, L Wan, ... Applied Surface Science 479, 1246-1253, 2019 | 65 | 2019 |
| Unusual optical properties of type-II In As∕ Ga As 0.7 Sb 0.3 quantum dots by photoluminescence studies TT Chen, CL Cheng, YF Chen, FY Chang, HH Lin, CT Wu, CH Chen Physical Review B 75 (3), 033310, 2007 | 64 | 2007 |
| Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer HK Chiou, HH Lin, CY Chang IEEE Microwave and guided wave letters 7 (8), 248-250, 1997 | 63 | 1997 |
| Energy gap reduction in dilute nitride GaAsSbN YT Lin, TC Ma, TY Chen, HH Lin Applied Physics Letters 93 (17), 171914, 2008 | 61 | 2008 |
| Transport theory of the double heterojunction bipolar transistor based on current balancing concept SC Lee, HH Lin Journal of applied physics 59 (5), 1688-1695, 1986 | 58 | 1986 |
| Balun design for uniplanar broad band double balanced mixer HK Chiou, CY Chang, HH Lin Electronics Letters 31 (24), 2113-2114, 1995 | 51 | 1995 |
| Insulator-quantum Hall conductor transitions at low magnetic field CF Huang, YH Chang, CH Lee, HT Chou, HD Yeh, CT Liang, YF Chen, ... Physical Review B 65 (4), 045303, 2001 | 47 | 2001 |
| Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells TS Wang, JT Tsai, KI Lin, JS Hwang, HH Lin, LC Chou Materials Science and Engineering: B 147 (2-3), 131-135, 2008 | 45 | 2008 |
| Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy SA Cripps, TJC Hosea, A Krier, V Smirnov, PJ Batty, QD Zhuang, HH Lin, ... Applied physics letters 90 (17), 172106, 2007 | 43 | 2007 |
