| Reversible self-assembly of superstructured networks R Freeman, M Han, Z Álvarez, JA Lewis, JR Wester, N Stephanopoulos, ... Science 362 (6416), 808-813, 2018 | 304 | 2018 |
| Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments MS Wong, JA Kearns, C Lee, JM Smith, C Lynsky, G Lheureux, H Choi, ... Optics express 28 (4), 5787-5793, 2020 | 135 | 2020 |
| Color-tunable< 10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates SS Pasayat, R Ley, C Gupta, MS Wong, C Lynsky, Y Wang, MJ Gordon, ... Applied Physics Letters 117 (6), 2020 | 57 | 2020 |
| Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm P Li, H Li, H Zhang, C Lynsky, M Iza, JS Speck, S Nakamura, ... Applied Physics Letters 119 (8), 2021 | 54 | 2021 |
| Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact P Li, H Li, H Zhang, Y Yang, MS Wong, C Lynsky, M Iza, MJ Gordon, ... Applied Physics Letters 120 (12), 2022 | 48 | 2022 |
| InGaN-based microLED devices approaching 1% EQE with red 609 nm electroluminescence on semi-relaxed substrates RC White, H Li, M Khoury, C Lynsky, M Iza, S Keller, D Sotta, S Nakamura, ... Crystals 11 (11), 1364, 2021 | 34 | 2021 |
| High-temperature electroluminescence properties of InGaN red 40× 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2% P Li, A David, H Li, H Zhang, C Lynsky, Y Yang, M Iza, JS Speck, ... Applied Physics Letters 119 (23), 2021 | 29 | 2021 |
| Barriers to carrier transport in multiple quantum well nitride-based -plane green light emitting diodes C Lynsky, AI Alhassan, G Lheureux, B Bonef, SP DenBaars, S Nakamura, ... Physical Review Materials 4 (5), 054604, 2020 | 27 | 2020 |
| Demonstration of ultra-small 5× 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2% P Li, H Li, Y Yang, H Zhang, P Shapturenka, M Wong, C Lynsky, M Iza, ... Applied Physics Letters 120 (4), 2022 | 23 | 2022 |
| Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah, JS Speck, S Nakamura, ... Applied Physics Letters 118 (26), 2021 | 22 | 2021 |
| A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes G Lheureux, C Lynsky, YR Wu, JS Speck, C Weisbuch Journal of Applied Physics 128 (23), 2020 | 20 | 2020 |
| Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates C Lynsky, RC White, YC Chow, WY Ho, S Nakamura, SP DenBaars, ... Journal of Crystal Growth 560, 126048, 2021 | 18 | 2021 |
| Improved Vertical Carrier Transport for Green III-Nitride LEDs Using Alloy Quantum Barriers C Lynsky, G Lheureux, B Bonef, KS Qwah, RC White, SP DenBaars, ... Physical Review Applied 17 (5), 054048, 2022 | 14 | 2022 |
| Structure of V-defects in long wavelength GaN-based light emitting diodes F Wu, J Ewing, C Lynsky, M Iza, S Nakamura, SP DenBaars, JS Speck Journal of Applied Physics 133 (3), 2023 | 12 | 2023 |
| Influence of superlattice structure on V-defect distribution, external quantum efficiency and electroluminescence for red InGaN based µLEDs on silicon J Ewing, C Lynsky, J Zhang, P Shapturenka, M Wong, J Smith, M Iza, ... Crystals 12 (9), 1216, 2022 | 12 | 2022 |
| Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells R Yapparov, YC Chow, C Lynsky, F Wu, S Nakamura, JS Speck, ... Journal of Applied Physics 128 (22), 2020 | 12 | 2020 |
| Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited -Plane and -Plane (,) Quantum Wells R Aleksiejūnas, K Nomeika, O Kravcov, S Nargelas, L Kuritzky, C Lynsky, ... Physical Review Applied 14 (5), 054043, 2020 | 12 | 2020 |
| Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah, M Iza, JS Speck, ... Optics Express 29 (14), 22001-22007, 2021 | 11 | 2021 |
| Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes YC Chow, C Lynsky, S Nakamura, SP DenBaars, C Weisbuch, JS Speck Applied Physics Letters 121 (18), 2022 | 10 | 2022 |
| Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers YC Chow, C Lynsky, F Wu, S Nakamura, SP DenBaars, C Weisbuch, ... Applied Physics Letters 119 (22), 2021 | 10 | 2021 |
