| Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region T Holtij, M Schwarz, A Kloes, B Iniguez Solid-state electronics 90, 107-115, 2013 | 61 | 2013 |
| 2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage T Holtij, M Schwarz, A Kloes, B Iñíguez 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 44 | 2012 |
| : A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs A Kloes, M Schwarz, T Holtij IEEE transactions on electron devices 59 (2), 349-358, 2012 | 41 | 2012 |
| On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes IEEE Transactions on Electron Devices 64 (9), 3808 - 3815, 2017 | 35 | 2017 |
| Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs M Schwarz, T Holtij, A Kloes, B Iniguez Solid-State Electronics 69, 72-84, 2012 | 35 | 2012 |
| 2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET M Schwarz, M Weidemann, A Kloes, B Iñíguez Solid-State Electronics 54 (11), 1372-1380, 2010 | 32 | 2010 |
| 2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current M Schwarz, T Holtij, A Kloes, B Iñíguez Solid-State Electronics 63 (1), 119-129, 2011 | 24 | 2011 |
| Analysis and Performance Study of III-V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model M Schwarz, A Kloes IEEE Transactions on Electron Devices 63 (7), 2757 - 2763, 2016 | 18 | 2016 |
| Quantum Confinement and Volume Inversion inModel for Short-Channel Tri-Gate MOSFETs A Kloes, M Schwarz, T Holtij, A Navas IEEE transactions on electron devices 60 (8), 2691-2694, 2013 | 16 | 2013 |
| The Schottky barrier transistor in emerging electronic devices M Schwarz, TD Vethaak, V Derycke, A Francheteau, B Iniguez, S Kataria, ... Nanotechnology 34 352002, 2023 | 15 | 2023 |
| The future is MEMS design considerations of microelectromechanical systems at Bosch M Schwarz, J Franz, M Reimann 2015 22nd International Conference Mixed Design of Integrated Circuits …, 2015 | 15 | 2015 |
| Analytical current equation for short channel SOI multigate FETs including 3D effects A Kloes, M Weidemann, M Schwarz Solid-state electronics 54 (11), 1408-1415, 2010 | 15 | 2010 |
| Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors C Roemer, G Darbandy, M Schwarz, J Trommer, A Heinzig, T Mikolajick, ... IEEE Journal of the Electron Devices Society 10, 416 - 423, 2021 | 14 | 2021 |
| A Comprehensive Physics-Based Current-Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs SA Ahsan, SK Singh, C Yadav, EG Marín, A Kloes, M Schwarz IEEE Transactions on Electron Devices 67 (11), 2020 | 12 | 2020 |
| Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs M Schwarz, T Holtij, A Kloes, B Iniguez Solid-state electronics 82, 86-98, 2013 | 12 | 2013 |
| 2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs M Schwarz, T Holtij, A Kloes, B Iñíguez Proceedings of the 18th International Conference Mixed Design of Integrated …, 2011 | 12 | 2011 |
| 2D analytical calculation of the parasitic source/drain resistances in DG-MOSFETs using the conformal mapping technique T Holtij, M Schwarz, A Kloes, B Iñíguez IETE Journal of Research 58 (3), 205-213, 2012 | 10 | 2012 |
| Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts A Farokhnejad, M Schwarz, F Horst, B Iñíguez, F Lime, A Kloes Solid-State Electronics 159, 191-196, 2019 | 8 | 2019 |
| Model for investigation of Ion/Ioffratios in short-channel junctionless double gate MOSFETs T Holtij, M Schwarz, M Graef, F Hain, A Kloes, B Iñíguez 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 8 | 2013 |
| Method and control unit for activating at least one safety device M Hiemer, M Schwarz US Patent US20110153164 A1, 2011 | 8 | 2011 |
Alexander KloesProfessor, Technische Hochschule Mittelhessen在 ei.thm.de 的电子邮件经过验证
