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Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation F Predan, D Reinwand, R Cariou, M Niemeyer, F Dimroth Journal of Vacuum Science & Technology A 34 (3), 2016 | 9 | 2016 |
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Wafer-bonded GaInP/GaAs/GaInAs//GaSb four-junction solar cells with 43.8% efficiency under concentration F Predan, A Franke, O Hoehn, D Lackner, H Helmers, G Siefer, AW Bett, ... 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0250-0252, 2020 | 5 | 2020 |
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P. Fuß-This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Kailuweit, Four-junction wafer-bonded concentrator solar cells F Dimroth, TN Tibbits, M Niemeyer, F Predan, P Beutel, C Karcher, E Oliva, ... IEEE Journal of Photovoltaics 6 (1), 343-349, 2015 | 5 | 2015 |
Quadruple Junction Solar Cell with 47.6% Conversion Efficiency under Concentration P Schygulla, P Beutel, S Heckelmann, O Höhn, M Klitzke, J Schön, ... | 4 | 2022 |
Developments for wafer-bonded four-junction solar cells based on GaSb F Predan, D Lackner, E Oliva, A Kovács, W Jäger, F Dimroth 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 1-6, 2018 | 4 | 2018 |
Advancing solar energy conversion efficiency to 47.6% and exploring the spectral versatility of III-V photonic power converters H Helmers, O Höhn, D Lackner, P Schygulla, M Klitzke, J Schön, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XIII …, 2024 | 3 | 2024 |