| Electrical characteristics of high quality La 2 O 3 gate dielectric with equivalent oxide thickness of 5/spl Aring YH Wu, MY Yang, A Chin, WJ Chen, CM Kwei IEEE Electron Device Letters 21 (7), 341-343, 2000 | 271 | 2000 |
| High quality La/sub 2/O/sub 3/and Al/sub 2/O/sub 3/gate dielectrics with equivalent oxide thickness 5-10/spl Aring A Chin, YH Wu, SB Chen, CC Liao, WJ Chen 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000 | 208 | 2000 |
| High-PerformanceMIM Capacitors for Analog Applications KC Chiang, CC Huang, GL Chen, WJ Chen, HL Kao, YH Wu, A Chin, ... IEEE transactions on electron devices 53 (9), 2312-2319, 2006 | 111 | 2006 |
| High density metal-insulator-metal capacitor based on ZrO2∕ Al2O3∕ ZrO2 laminate dielectric YH Wu, CK Kao, BY Chen, YS Lin, MY Li, HC Wu Applied Physics Letters 93 (3), 2008 | 95 | 2008 |
| Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors KY Chen, PH Chen, RW Kao, YX Lin, YH Wu IEEE Electron Device Letters 39 (1), 87-90, 2017 | 71 | 2017 |
| Fabrication of very high resistivity Si with low loss and cross talk YH Wu, A Chin, KH Shih, CC Wu, CP Liao, SC Pai, CC Chi IEEE Electron Device Letters 21 (9), 442-444, 2000 | 58* | 2000 |
| Electrostatic studies of π–π interaction for benzene stacking on a graphene layer Y Hsun Su, Y Kai Wu, SL Tu, SJ Chang Applied Physics Letters 99 (16), 2011 | 57 | 2011 |
| RF loss and crosstalk on extremely high resistivity (10 k-1 M/spl Omega/-cm) Si fabricated by ion implantation YH Wu, A Chin, KH Shih, CC Wu, CP Liao, SC Pai, CC Chi 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017 …, 2000 | 55 | 2000 |
| FeFET memory featuring large memory window and robust endurance of long-pulse cycling by interface engineering using high-k AlON CY Chan, KY Chen, HK Peng, YH Wu 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 53 | 2020 |
| Nitrided Tetragonalas the Charge-Trapping Layer for Nonvolatile Memory Application YH Wu, LL Chen, YS Lin, MY Li, HC Wu IEEE electron device letters 30 (12), 1290-1292, 2009 | 44 | 2009 |
| Long-Endurance Nanocrystal Resistive Memory Using a TaON Buffer Layer CH Cheng, PC Chen, YH Wu, FS Yeh, A Chin IEEE electron device letters 32 (12), 1749-1751, 2011 | 43 | 2011 |
| Junctionless poly-GeSn ferroelectric thin-film transistors with improved reliability by interface engineering for neuromorphic computing CP Chou, YX Lin, YK Huang, CY Chan, YH Wu ACS applied materials & interfaces 12 (1), 1014-1023, 2019 | 42 | 2019 |
| Influence of plasma fluorination on p-type channel tin-oxide thin film transistors PC Chen, YC Chiu, ZW Zheng, CH Cheng, YH Wu Journal of Alloys and Compounds 707, 162-166, 2017 | 42 | 2017 |
| Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions JR Wu, YH Wu, CY Hou, ML Wu, CC Lin, LL Chen Applied Physics Letters 99 (25), 2011 | 39 | 2011 |
| High speed and large memory window ferroelectric HfZrO₂ FinFET for high-density nonvolatile memory SC Yan, GM Lan, CJ Sun, YH Chen, CH Wu, HK Peng, YH Lin, YH Wu, ... IEEE Electron Device Letters 42 (9), 1307-1310, 2021 | 38 | 2021 |
| Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer HK Peng, CY Chan, KY Chen, YH Wu Applied Physics Letters 118 (10), 2021 | 38 | 2021 |
| N-MOSFETs formed on solid phase epitaxially grown GeSn film with passivation by oxygen plasma featuring high mobility YC Fang, KY Chen, CH Hsieh, CC Su, YH Wu ACS applied materials & interfaces 7 (48), 26374-26380, 2015 | 36 | 2015 |
| MIM Capacitors With Crystalline-Stack Featuring High Capacitance Density and Low Voltage Coefficient YH Wu, WY Ou, CC Lin, JR Wu, ML Wu, LL Chen IEEE electron device letters 33 (1), 104-106, 2011 | 35 | 2011 |
| High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric YH Wu, CC Lin, LL Chen, YC Hu, JR Wu, ML Wu Applied Physics Letters 98 (1), 2011 | 34 | 2011 |
| TetragonalStack as High-Gate Dielectric for Si-Based MOS Devices YH Wu, LL Chen, RJ Lyu, MY Li, HC Wu IEEE electron device letters 31 (9), 1014-1016, 2010 | 31 | 2010 |
Chun-Hu ChengNational Taiwan Normal University在 ntnu.edu.tw 的电子邮件经过验证
Chun-Hu ChengNational Taiwan Normal University在 ntnu.edu.tw 的电子邮件经过验证
Jia-Hong HuangNational Tsing Hua University在 mx.nthu.edu.tw 的电子邮件经过验证
Chen Yang Yin 陈杨胤SanDisk在 sandisk.com 的电子邮件经过验证
Leqi ZhangMentor Graphics在 mentor.com 的电子邮件经过验证