| The impact of high-/spl kappa/gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs B Cheng, M Cao, R Rao, A Inani, PV Voorde, WM Greene, JMC Stork, ... IEEE Transactions on Electron Devices 46 (7), 1537-1544, 1999 | 466 | 1999 |
| A Tunnel FET forScaling Below 0.6 V With a CMOS-Comparable Performance R Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR Rao IEEE Transactions on Electron Devices 58 (7), 1855-1863, 2011 | 187 | 2011 |
| Fabrication and Analysis of a Heterojunction Line Tunnel FET AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 61 (3), 707-715, 2014 | 144 | 2014 |
| Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ... IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009 | 140 | 2009 |
| Polymer nanocomposite nanomechanical cantilever sensors: material characterization, device development and application in explosive vapour detection V Seena, A Fernandes, P Pant, S Mukherji, VR Rao Nanotechnology 22 (29), 295501, 2011 | 136 | 2011 |
| Gate fringe-induced barrier lowering in underlap FinFET structures and its optimization AB Sachid, CR Manoj, DK Sharma, VR Rao IEEE Electron Device Letters 29 (1), 128-130, 2007 | 136 | 2007 |
| Insights into the design and optimization of tunnel-FET devices and circuits A Pal, AB Sachid, H Gossner, VR Rao IEEE Transactions on Electron devices 58 (4), 1045-1053, 2011 | 134 | 2011 |
| NBTI degradation and its impact for analog circuit reliability NK Jha, PS Reddy, DK Sharma, VR Rao IEEE Transactions on Electron Devices 52 (12), 2609-2615, 2005 | 130 | 2005 |
| Organic field effect transistors (OFETs) in environmental sensing and health monitoring: A review SG Surya, HN Raval, R Ahmad, P Sonar, KN Salama, VR Rao TrAC Trends in Analytical Chemistry 111, 27-36, 2019 | 113 | 2019 |
| Impact of High- Gate Dielectrics on the Device and Circuit Performance of Nanoscale FinFETs CR Manoj, VR Rao IEEE electron device letters 28 (4), 295-297, 2007 | 112 | 2007 |
| Physical insight toward heat transport and an improved electrothermal modeling framework for FinFET architectures M Shrivastava, M Agrawal, S Mahajan, H Gossner, T Schulz, DK Sharma, ... IEEE Transactions on Electron Devices 59 (5), 1353-1363, 2012 | 110 | 2012 |
| Impact of halo doping on the subthreshold performance of deep-submicrometer CMOS devices and circuits for ultralow power analog/mixed-signal applications S Chakraborty, A Mallik, CK Sarkar, VR Rao IEEE Transactions on Electron Devices 54 (2), 241-248, 2007 | 107 | 2007 |
| Silanization and antibody immobilization on SU-8 M Joshi, R Pinto, VR Rao, S Mukherji Applied surface science 253 (6), 3127-3132, 2007 | 101 | 2007 |
| The effect of high-k gate dielectrics on deep submicrometer CMOS device and circuit performance NR Mohapatra, MP Desai, SG Narendra, VR Rao IEEE transactions on electron devices 49 (5), 826-831, 2002 | 100 | 2002 |
| DC compact model for SOI tunnel field-effect transistors B Bhushan, K Nayak, VR Rao IEEE transactions on electron devices 59 (10), 2635-2642, 2012 | 99 | 2012 |
| A novel dry method for surface modification of SU-8 for immobilization of biomolecules in Bio-MEMS M Joshi, N Kale, R Lal, VR Rao, S Mukherji Biosensors and Bioelectronics 22 (11), 2429-2435, 2007 | 95 | 2007 |
| An ultra-sensitive piezoresistive polymer nano-composite microcantilever sensor electronic nose platform for explosive vapor detection SJ Patil, N Duragkar, VR Rao Sensors and Actuators B: Chemical 192, 444-451, 2014 | 92 | 2014 |
| Device design and optimization considerations for bulk FinFETs CR Manoj, M Nagpal, D Varghese, VR Rao IEEE transactions on electron devices 55 (2), 609-615, 2008 | 91 | 2008 |
| Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference? AB Sachid, R Francis, MS Baghini, DK Sharma, KH Bach, R Mahnkopf, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 89 | 2008 |
| Semiconductor devices H Gossner, R Rao, A Sachid, A Pal, R Asra US Patent 8,405,121, 2013 | 84 | 2013 |
Maryam Shojaei BaghiniProfessor of Electrical Engineering, IIT-Bombay在 iitb.ac.in 的电子邮件经过验证
