| High acceptor level doping in silicon germanium MA Ebrish, O Gluschenkov, S Mochizuki, A Reznicek US Patent 9,799,736, 2017 | 329 | 2017 |
| SnSe2 field-effect transistors with high drive current Y Su, MA Ebrish, EJ Olson, SJ Koester Applied Physics Letters 103 (26), 2013 | 123 | 2013 |
| Graphene-based quantum capacitance wireless vapor sensors DA Deen, EJ Olson, MA Ebrish, SJ Koester IEEE Sensors Journal 14 (5), 1459-1466, 2013 | 65 | 2013 |
| Capacitive Sensing of Intercalated H2O Molecules Using Graphene EJ Olson, R Ma, T Sun, MA Ebrish, N Haratipour, K Min, NR Aluru, ... ACS applied materials & interfaces 7 (46), 25804-25812, 2015 | 55 | 2015 |
| Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes MA Ebrish, H Shao, SJ Koester Applied Physics Letters 100 (14), 2012 | 45 | 2012 |
| Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene MA Ebrish, EJ Olson, SJ Koester ACS Applied Materials & Interfaces 6 (13), 10296-10303, 2014 | 39 | 2014 |
| Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ... Journal of Physics D: Applied Physics 54 (3), 034005, 2020 | 36 | 2020 |
| p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ... Journal of Applied Physics 128 (8), 2020 | 23 | 2020 |
| A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 19 | 2022 |
| Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ... Applied Physics Letters 117 (8), 2020 | 19 | 2020 |
| Delta-doped β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 17 | 2021 |
| Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques JC Gallagher, MA Ebrish, MA Porter, AG Jacobs, BP Gunning, RJ Kaplar, ... Scientific Reports 12 (1), 658, 2022 | 16 | 2022 |
| Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates MA Ebrish, SJ Koester 70th Device Research Conference, 105-106, 2012 | 16 | 2012 |
| Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics MA Ebrish, DA Deen, SJ Koester 71st Device Research Conference, 37-38, 2013 | 14 | 2013 |
| 12.5 kV GaN super-heterojunction Schottky barrier diodes SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ... IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021 | 12 | 2021 |
| Effect of GaN substrate properties on vertical GaN PiN diode electrical performance JC Gallagher, TJ Anderson, AD Koehler, MA Ebrish, GM Foster, ... Journal of Electronic Materials 50, 3013-3021, 2021 | 12 | 2021 |
| Nanosheet substrate to source/drain isolation FL Lie, M Ebrish, EA De Silva, I Seshadri, G Karve, LA Clevenger, ... US Patent 10,734,523, 2020 | 12 | 2020 |
| Development of high-voltage vertical GaN PN diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020 | 10 | 2020 |
| Impact of anode thickness on breakdown mechanisms in vertical GaN PiN diodes with planar edge termination MA Ebrish, MA Porter, AG Jacobs, JC Gallagher, RJ Kaplar, BP Gunning, ... Crystals 12 (5), 623, 2022 | 8 | 2022 |
| A study on the impact of mid-gap defects on vertical GaN diodes MA Ebrish, TJ Anderson, AD Koehler, GM Foster, JC Gallagher, RJ Kaplar, ... IEEE Transactions on Semiconductor Manufacturing 33 (4), 546-551, 2020 | 6 | 2020 |
Steven J. KoesterProfessor of Electrical & Computer Engineering, University of Minnesota在 umn.edu 的电子邮件经过验证
