| Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ... IEEE Transactions on Electron Devices 63 (2), 614-619, 2016 | 98 | 2016 |
| High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ... IEEE Electron Device Letters 37 (12), 1617-1620, 2016 | 83 | 2016 |
| Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ... Applied Physics Letters 107 (26), 2015 | 63 | 2015 |
| Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ... Journal of Vacuum Science & Technology B 34 (4), 2016 | 47 | 2016 |
| Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen IEEE Electron Device Letters 39 (3), 413-416, 2018 | 44 | 2018 |
| Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform Q Bao, T Zhu, N Zhou, S Guo, J Luo, C Zhao Journal of Crystal Growth 419, 52-56, 2015 | 33 | 2015 |
| Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate Q Bao, J Luo, C Zhao Vacuum 101, 184-188, 2014 | 29 | 2014 |
| Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen 2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017 | 28 | 2017 |
| Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure Q Bao, S Huang, X Wang, K Wei, Y Zheng, Y Li, C Yang, H Jiang, J Li, ... Semiconductor Science and Technology 31 (6), 065014, 2016 | 27 | 2016 |
| Hole-induced threshold voltage shift under reverse-bias stress in E-mode GaN MIS-FET M Hua, J Wei, Q Bao, Z Zheng, Z Zhang, J He, KJ Chen IEEE Transactions on Electron Devices 65 (9), 3831-3838, 2018 | 22 | 2018 |
| High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer M Hua, Z Zhang, Q Qian, J Wei, Q Bao, G Tang, KJ Chen 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 9 | 2017 |
| Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures X Ma, Y Liu, X Wang, S Huang, Z Gao, Q Bao, X Liu physica status solidi (a) 212 (12), 2928-2935, 2015 | 9 | 2015 |
| GaN-based power electronic device and method for manufacturing the same S Huang, X Liu, XH Wang, K Wei, BAO Qilong, W Wang, C Zhao US Patent 10,062,775, 2018 | 4 | 2018 |
| Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature X Liu, S Huang, Q Bao, X Wang, K Wei, Y Li, J Xiang, C Zhao, X Yang, ... Journal of Vacuum Science & Technology B 36 (2), 2018 | 4 | 2018 |
| Device physics towards high performance GaN-based power electronics K Wei, S Yang, J Chen, Z Tang, X Liu, S Huang, X Wang, Q Bao, M Hua Scientia Sinica Physica, Mechanica & Astronomica 46 (10), 107307, 2016 | 3 | 2016 |
| Gallium nitride component, method for manufacturing gallium nitride component, and electronic device T Gaofei, D Ueda, H Sun, BAO Qilong, W Hanxing US Patent App. 18/592,325, 2024 | | 2024 |
| Integrated device, semiconductor device, and integrated device manufacturing method T Gaofei, BAO Qilong, W Hanxing, Q Jiang, D Ouyang US Patent App. 18/533,315, 2024 | | 2024 |
| Field effect transistor, preparation method thereof, and switch circuit BAO Qilong, Q Jiang, T Gaofei, W Hanxing, G Curatola US Patent App. 18/463,417, 2023 | | 2023 |
| Gallium Nitride Power Transistor G Curatola, BAO Qilong, Q Jiang, T Gaofei, W Hanxing US Patent App. 18/460,216, 2023 | | 2023 |
| Gallium Nitride Device, Switching Power Transistor, Drive Circuit, and Gallium Nitride Device Production Method BAO Qilong, Q Jiang, T Gaofei, W Hanxing, B Huang, Z Hou US Patent App. 17/727,221, 2022 | | 2022 |
