| High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-/RF-Sputtered- W Choi, O Seok, H Ryu, HY Cha, KS Seo IEEE Electron Device Letters 35 (2), 175-177, 2013 | 127 | 2013 |
| High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators O Seok, W Ahn, MK Han, MW Ha Semiconductor science and technology 28 (2), 025001, 2012 | 51 | 2012 |
| High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator O Seok, W Ahn, MK Han, MW Ha Electronics letters 49 (6), 425-427, 2013 | 19 | 2013 |
| High-voltage Schottky barrier diode on silicon substrate MW Ha, CH Roh, DW Hwang, HG Choi, HJ Song, JH Lee, JH Park, ... Japanese journal of applied physics 50 (6S), 06GF17, 2011 | 19 | 2011 |
| AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator O Seok, MW Ha Solid-State Electronics 105, 1-5, 2015 | 17 | 2015 |
| Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide O Seok, IH Kang, JH Moon, HW Kim, MW Ha, W Bahng Microelectronic Engineering 225, 111280, 2020 | 15 | 2020 |
| High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment O Seok, MK Han, YC Byun, J Kim, HC Shin, MW Ha Solid-State Electronics 103, 49-53, 2015 | 15 | 2015 |
| High breakdown voltage AlGaN/GaN HEMTs employing recessed gate edge structure M Kim, YH Choi, J Lim, YS Kim, O Seok, MK Han Proc. international conference on compound semiconductor manufacturing …, 2010 | 14 | 2010 |
| Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer HW Kim, O Seok, JH Moon, W Bahng, J Jo Japanese Journal of Applied Physics 56 (12), 120305, 2017 | 13 | 2017 |
| Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors O Seok, W Ahn, MK Han, MW Ha Journal of Vacuum Science & Technology B 31 (1), 2013 | 13 | 2013 |
| TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing JH Moon, IH Kang, HW Kim, O Seok, W Bahng, MW Ha Current Applied Physics 20 (12), 1386-1390, 2020 | 10 | 2020 |
| High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates O Seok, HW Kim, JH Moon, HS Lee, W Bahng Japanese Journal of Applied Physics 57 (6S1), 06HC08, 2018 | 10 | 2018 |
| Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well O Seok, MW Ha, IH Kang, HW Kim, DY Kim, W Bahng Japanese Journal of Applied Physics 57 (6S1), 06HC07, 2018 | 10 | 2018 |
| Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma O Seok, YJ Kim, W Bahng Physica Scripta 95 (4), 045606, 2020 | 9 | 2020 |
| High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing W Ahn, O Seok, SM Song, MK Han, MW Ha Journal of crystal growth 378, 600-603, 2013 | 8 | 2013 |
| Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling JH Jeong, O Seok, HJ Lee Applied Sciences 11 (24), 12075, 2021 | 7 | 2021 |
| Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2 YJ Jo, JH Moon, O Seok, W Bahng, TJ Park, MW Ha JSTS: Journal of Semiconductor Technology and Science 17 (2), 265-270, 2017 | 7 | 2017 |
| Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs) W Ahn, O Seok, MW Ha, YS Kim, MK Han ECS Transactions 53 (2), 171, 2013 | 7 | 2013 |
| Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond schottky barrier diodes based on numerical simulation O Seok, MW Ha Japanese Journal of Applied Physics 60 (SC), SCCE08, 2021 | 6 | 2021 |
| Mobility models based on forward current-voltage characteristics of P-type Pseudo-vertical diamond Schottky barrier diodes MW Ha, O Seok, H Lee, HH Lee Micromachines 11 (6), 598, 2020 | 6 | 2020 |
