| High-power and high-efficiency InGaN-based light emitters A Laubsch, M Sabathil, J Baur, M Peter, B Hahn IEEE transactions on electron devices 57 (1), 79-87, 2009 | 450 | 2009 |
| A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 2009 | 172 | 2009 |
| Method for fabricating a semiconductor component based on GaN S Bader, D Eisert, B Hahn, V Härle US Patent 7,691,656, 2010 | 165 | 2010 |
| Radiation-emitting semiconductor element and method for producing the same S Bader, B Hahn, V Härle, HJ Lugauer, M Mundbrod-Vangerow, D Eisert US Patent 6,878,563, 2005 | 130 | 2005 |
| New developments in green LEDs M Peter, A Laubsch, W Bergbauer, T Meyer, M Sabathil, J Baur, B Hahn physica status solidi (a) 206 (6), 1125-1129, 2009 | 122 | 2009 |
| MOCVD layer growth of ZnO using DMZn and tertiary butanol B Hahn, G Heindel, E Pschorr-Schoberer, W Gebhardt Semiconductor science and technology 13 (7), 788, 1998 | 120 | 1998 |
| Optical semiconductor device comprising a multiple quantum well structure V Harle, B Hahn, HJ Lugauer, H Bolay, S Bader, D Eisert, U Strauss, ... US Patent 6,849,881, 2005 | 114 | 2005 |
| High brightness LEDs for general lighting applications using the new ThinGaN™‐Technology V Haerle, B Hahn, S Kaiser, A Weimar, S Bader, F Eberhard, A Plössl, ... physica status solidi (a) 201 (12), 2736-2739, 2004 | 110 | 2004 |
| Module comprising radiation-emitting semiconductor bodies S Grötsch, B Hahn, S Illek, W Schnabel US Patent 8,154,031, 2012 | 109 | 2012 |
| Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same B Hahn, U Jacob, HJ Lugauer, M Mundbrod-Vangerow US Patent 7,265,392, 2007 | 104 | 2007 |
| Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates B Galler, P Drechsel, R Monnard, P Rode, P Stauss, S Froehlich, ... Applied Physics Letters 101 (13), 2012 | 100 | 2012 |
| Method for fabricating a plurality of semiconductor chips B Hahn, V Harle US Patent 7,291,509, 2007 | 91 | 2007 |
| Light emitting-diode chip and a method for producing same S Bader, B Hahn, V Härle, HJ Lugauer, M Mundbrod-Vangerow US Patent 7,319,247, 2008 | 82 | 2008 |
| Cu(In,Ga)Se2 solar cells with a ZnSe buffer layer: interface characterization by quantum efficiency measurements F Engelhardt, L Bornemann, M Köntges, T Meyer, J Parisi, ... Progress in Photovoltaics: Research and Applications 7 (6), 423-436, 1999 | 74 | 1999 |
| Light-emitting diode and method for the production thereof J Baur, D Eisert, M Fehrer, B Hahn, V Härle, U Jacob, W Plass, U Strauss, ... US Patent 7,015,514, 2006 | 72 | 2006 |
| Development of high-efficiency and high-power vertical light emitting diodes B Hahn, B Galler, K Engl Japanese Journal of Applied Physics 53 (10), 100208, 2014 | 69 | 2014 |
| Optical semiconductor device with multiple quantum well structure V Harle, B Hahn, HJ Lugauer, H Bolay, S Bader, D Eisert, U Strauss, ... US Patent 7,106,090, 2006 | 69 | 2006 |
| Experimental determination of the dominant type of Auger recombination in InGaN quantum wells B Galler, HJ Lugauer, M Binder, R Hollweck, Y Folwill, A Nirschl, ... Applied Physics Express 6 (11), 112101, 2013 | 68 | 2013 |
| Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes M Meneghini, N Trivellin, M Pavesi, M Manfredi, U Zehnder, B Hahn, ... Applied Physics Letters 95 (17), 2009 | 67 | 2009 |
| Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes M Meneghini, M la Grassa, S Vaccari, B Galler, R Zeisel, P Drechsel, ... Applied Physics Letters 104 (11), 2014 | 64 | 2014 |
