Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper L Banszerus, M Schmitz, S Engels, J Dauber, M Oellers, F Haupt, ... Science advances 1 (6), e1500222, 2015 | 903 | 2015 |
Raman spectroscopy as probe of nanometre-scale strain variations in graphene C Neumann, S Reichardt, P Venezuela, M Drögeler, L Banszerus, ... Nature communications 6 (1), 8429, 2015 | 464 | 2015 |
Production and processing of graphene and related materials C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ... 2D Materials 7 (2), 022001, 2020 | 435* | 2020 |
Ballistic transport exceeding 28 μm in CVD grown graphene L Banszerus, M Schmitz, S Engels, M Goldsche, K Watanabe, T Taniguchi, ... Nano letters 16 (2), 1387-1391, 2016 | 399 | 2016 |
Spin lifetimes exceeding 12 ns in graphene nonlocal spin valve devices M Drögeler, C Franzen, F Volmer, T Pohlmann, L Banszerus, M Wolter, ... Nano letters 16 (6), 3533-3539, 2016 | 286 | 2016 |
Out-of-plane heat transfer in van der Waals stacks through electron–hyperbolic phonon coupling KJ Tielrooij, NCH Hesp, A Principi, MB Lundeberg, EAA Pogna, ... Nature nanotechnology 13 (1), 41-46, 2018 | 186 | 2018 |
Identifying suitable substrates for high-quality graphene-based heterostructures L Banszerus, H Janssen, M Otto, A Epping, T Taniguchi, K Watanabe, ... 2D Materials 4 (2), 025030, 2017 | 110 | 2017 |
Gate-defined electron-hole double dots in bilayer graphene L Banszerus, B Frohn, A Epping, D Neumaier, K Watanabe, T Taniguchi, ... arXiv preprint arXiv:1803.10857, 2018 | 75 | 2018 |
Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ... ACS nano 15 (7), 11285-11295, 2021 | 64 | 2021 |
Single-electron double quantum dots in bilayer graphene L Banszerus, S Möller, E Icking, K Watanabe, T Taniguchi, C Volk, ... Nano letters 20 (3), 2005-2011, 2020 | 63 | 2020 |
High mobility dry-transferred CVD bilayer graphene M Schmitz, S Engels, L Banszerus, K Watanabe, T Taniguchi, C Stampfer, ... Applied Physics Letters 110 (26), 2017 | 62 | 2017 |
Electron–hole crossover in gate-controlled bilayer graphene quantum dots L Banszerus, A Rothstein, T Fabian, S Moller, E Icking, S Trellenkamp, ... Nano letters 20 (10), 7709-7715, 2020 | 58 | 2020 |
Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport L Banszerus, B Frohn, T Fabian, S Somanchi, A Epping, M Müller, ... Physical review letters 124 (17), 177701, 2020 | 55 | 2020 |
Graphene Field-Effect Transistors With High Extrinsic and M Bonmann, M Asad, X Yang, A Generalov, A Vorobiev, L Banszerus, ... IEEE Electron Device Letters 40 (1), 131-134, 2018 | 52 | 2018 |
Spin-valley coupling in single-electron bilayer graphene quantum dots L Banszerus, S Möller, C Steiner, E Icking, S Trellenkamp, F Lentz, ... Nature communications 12 (1), 5250, 2021 | 43 | 2021 |
Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ... arXiv preprint arXiv:1909.09523, 2019 | 41 | 2019 |
Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene E Icking, L Banszerus, F Wörtche, F Volmer, P Schmidt, C Steiner, ... Advanced Electronic Materials 8 (11), 2200510, 2022 | 35 | 2022 |
Spin relaxation in a single-electron graphene quantum dot L Banszerus, K Hecker, S Möller, E Icking, K Watanabe, T Taniguchi, ... Nature communications 13 (1), 3637, 2022 | 33 | 2022 |
Quantum transport through MoS2 constrictions defined by photodoping A Epping, L Banszerus, J Güttinger, L Krückeberg, K Watanabe, ... Journal of Physics: Condensed Matter 30 (20), 205001, 2018 | 31 | 2018 |
Encapsulated graphene‐based Hall sensors on foil with increased sensitivity Z Wang, L Banszerus, M Otto, K Watanabe, T Taniguchi, C Stampfer, ... physica status solidi (b) 253 (12), 2316-2320, 2016 | 29 | 2016 |