| Low-carrier-density sputtered MoS2 film by vapor-phase sulfurization K Matsuura, T Ohashi, I Muneta, S Ishihara, K Kakushima, K Tsutsui, ... Journal of Electronic Materials 47 (7), 3497-3501, 2018 | 56 | 2018 |
| Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9) 2S2 S Ishihara, Y Hibino, N Sawamoto, K Suda, T Ohashi, K Matsuura, ... Japanese Journal of Applied Physics 55 (4S), 04EJ07, 2016 | 47 | 2016 |
| Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs T Ohashi, K Suda, S Ishihara, N Sawamoto, S Yamaguchi, K Matsuura, ... Japanese Journal of Applied Physics 54 (4S), 04DN08, 2015 | 47 | 2015 |
| Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness T Ohashi, I Muneta, K Matsuura, S Ishihara, Y Hibino, N Sawamoto, ... Applied Physics Express 10 (4), 041202, 2017 | 34 | 2017 |
| Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9) 2S2 S Ishihara, Y Hibino, N Sawamoto, K Suda, T Ohashi, K Matsuura, ... Japanese Journal of Applied Physics 55 (6S1), 06GF01, 2016 | 34 | 2016 |
| Data augmentation for inertial sensor data in CNNs for cattle behavior classification C Li, KK Tokgoz, M Fukawa, J Bartels, T Ohashi, K Takeda, H Ito IEEE Sensors Letters 5 (11), 1-4, 2021 | 29 | 2021 |
| High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs J Shimizu, T Ohashi, K Matsuura, I Muneta, K Kakushima, K Tsutsui, ... Japanese Journal of Applied Physics 56 (4S), 04CP06, 2017 | 22 | 2017 |
| Designing interactive glazing through an engineering psychology approach: Six augmented reality scenarios that envision future car human-machine interface W Liu, Y Zhu, R Huang, T Ohashi, J Auernhammer, X Zhang, C Shi, ... Virtual Reality & Intelligent Hardware 5 (2), 157-170, 2023 | 18 | 2023 |
| Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing M Toyama, T Ohashi, K Matsuura, J Shimizu, I Muneta, K Kakushima, ... Japanese Journal of Applied Physics 57 (7S2), 07MA04, 2018 | 15 | 2018 |
| NeuroDesignScience: systematic literature review of current research on design using neuroscience techniques T Ohashi, J Auernhammer, W Liu, W Pan, L Leifer Design Computing and Cognition’20, 575-592, 2022 | 14 | 2022 |
| Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy S Ishihara, K Suda, Y Hibino, N Sawamoto, T Ohashi, S Yamaguchi, ... MRS Online Proceedings Library 1781, 11-16, 2015 | 13 | 2015 |
| The evolution of assistive technology: a literature review of technology developments and applications M Zallio, T Ohashi Human Factors in Accessibility and Assistive Technology 37, 85, 2022 | 12 | 2022 |
| Large scale uniformity of sputtering deposited single-and few-layer MoS2 investigated by XPS multipoint measurements and histogram analysis of optical contrast S Ishihara, Y Hibino, N Sawamoto, T Ohashi, K Matsuura, H Machida, ... ECS Journal of Solid State Science and Technology 5 (11), Q3012, 2016 | 11 | 2016 |
| Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing J Shimizu, T Ohashi, K Matsuura, I Muneta, K Kuniyuki, K Tsutsui, ... IEEE Journal of the Electron Devices Society 7, 2-6, 2018 | 10 | 2018 |
| NeuroDesign: Embracing neuroscience instruments to investigate human collaboration in design J Auernhammer, W Liu, T Ohashi, L Leifer, E Byler, W Pan Human Interaction, Emerging Technologies and Future Applications III …, 2021 | 9 | 2021 |
| Sputter-Deposited-MoS2 MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration K Matsuura, JI Shimizu, M Toyama, T Ohashi, I Muneta, S Ishihara, ... IEEE Journal of the Electron Devices Society 6, 1246-1252, 2018 | 9 | 2018 |
| Sulfurization in sulfur vapor for sputtered-MoS2 film Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki ... J., Ele. Mat. 47, 3497, 2018 | 9* | 2018 |
| Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET J Shimizu, T Ohashi, K Matsuura, I Muneta, K Kakushima, K Tsutsui, ... 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM …, 2017 | 9 | 2017 |
| Consumers' Willingness to Purchase High Animal-welfare Beef Products in Japan: Exploratory Research based on the Theory of Planned Behavior. T Washio, T Ohashi, M Saijo KMIS, 130-138, 2019 | 8 | 2019 |
| A data augmentation method for cow behavior estimation systems using 3-axis acceleration data and neural network technology C Li, KK Tokgoz, A Okumura, J Bartels, K Toda, H Matsushima, T Ohashi, ... IEICE Transactions on Fundamentals of Electronics, Communications and …, 2022 | 7 | 2022 |
Miki SaijoTokyo Institute of Technology在 m.titech.ac.jp 的电子邮件经过验证
