| A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy JP Ashton, SJ Moxim, PM Lenahan, CG McKay, RJ Waskiewicz, KJ Myers, ... IEEE transactions on nuclear science 66 (1), 428-436, 2018 | 31 | 2018 |
| Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs NJ Harmon, SR Mcmillan, JP Ashton, PM Lenahan, ME Flatte IEEE transactions on nuclear science 67 (7), 1669-1673, 2020 | 23 | 2020 |
| Observation of radiation-induced leakage current defects in MOS oxides with multifrequency electrically detected magnetic resonance and near-zero-field magnetoresistance SJ Moxim, JP Ashton, PM Lenahan, ME Flatté, NJ Harmon, SW King IEEE transactions on nuclear science 67 (1), 228-233, 2019 | 23 | 2019 |
| Multiple-photon transitions in electrically detected magnetic resonance measurements of transistors JP Ashton, PM Lenahan Physical Review B 102 (2), 020101, 2020 | 13 | 2020 |
| A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities JP Ashton, SJ Moxim, AD Purcell, PM Lenahan, JT Ryan Journal of Applied Physics 130 (13), 2021 | 11 | 2021 |
| Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders Journal of Applied Physics 126 (14), 2019 | 11 | 2019 |
| Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films BR Manning, JP Ashton, PM Lenahan Applied Physics Letters 118 (8), 2021 | 8 | 2021 |
| Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface NJ Harmon, JP Ashton, PM Lenahan, ME Flatté arXiv preprint arXiv:2008.08121, 2020 | 8 | 2020 |
| Magnetic field sensing with 4H SiC diodes: N vs P implantation CJ Cochrane, H Kraus, PG Neudeck, DJ Spry, RJ Waskiewicz, J Ashton, ... Materials Science Forum 924, 988-992, 2018 | 8 | 2018 |
| Ultra-low field frequency-swept electrically detected magnetic resonance JP Ashton, BR Manning, WR Barker, PM Lenahan Journal of Applied Physics 129 (8), 2021 | 5 | 2021 |
| Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors SJ Moxim, JP Ashton, MA Anders, JT Ryan Journal of Applied Physics 133 (14), 2023 | 4 | 2023 |
| A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy KJ Myers, PM Lenahan, JP Ashton, JT Ryan Journal of Applied Physics 132 (11), 2022 | 4 | 2022 |
| Detection of individual spin species via frequency-modulated charge pumping JP Ashton, MA Anders, JT Ryan Applied Physics Letters 120 (5), 2022 | 3 | 2022 |
| Leakage currents and E’centers in 4H-SiC MOSFETs with barium passivation JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 3 | 2020 |
| Reliability and performance issues in SiC MOSFETs: Insight provided by spin dependent recombination JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 3 | 2019 |
| Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC JP Ashton, BR Manning, SJ Moxim, FV Sharov, PM Lenahan, JT Ryan Applied Physics Letters 120 (6), 2022 | 2 | 2022 |
| Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices NJ Harmon, JP Ashton, PM Lenahan, ME Flatté Applied physics letters 123 (25), 2023 | 1 | 2023 |
| Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications SJ Moxim, NJ Harmon, KJ Myers, JP Ashton, EB Frantz, ME Flatté, ... Journal of Applied Physics 135 (15), 2024 | | 2024 |
| Understanding tunable near-zero-field magnetoresistance in Si MOSFETs S Moxim, N Harmon, K Myers, J Ashton, E Frantz, M Flatté, P Lenahan, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 Transistors SJ Moxim, JP Ashton, MA Anders, NW Lawson, JT Ryan 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023 | | 2023 |
P.M. LenahanDistinguished Professor of Engineering Science and Mecahnics and Co-Chair, Inter-College Graduate在 engr.psu.edu 的电子邮件经过验证
