Energy Dissipation in Monolayer MoS2 Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017 | 226 | 2017 |
Low Variability in Synthetic Monolayer MoS2 Devices KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop ACS nano 11 (8), 8456-8463, 2017 | 197 | 2017 |
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices KKH Smithe, CD English, SV Suryavanshi, E Pop 2D Materials 4 (1), 011009, 2016 | 179 | 2016 |
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017 | 175 | 2017 |
High Current Density in Monolayer MoS2 Doped by AlOx CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021 | 163 | 2021 |
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2 KKH Smithe, CD English, SV Suryavanshi, E Pop Nano letters 18 (7), 4516-4522, 2018 | 151 | 2018 |
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019 | 125 | 2019 |
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities SV Suryavanshi, E Pop Journal of Applied Physics 120 (22), 2016 | 112 | 2016 |
Effective n-type doping of monolayer MoS2 by AlOx CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017 | 58 | 2017 |
Thermal boundary conductance of two-dimensional MoS2 interfaces SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop Journal of Applied Physics 126 (5), 2019 | 50 | 2019 |
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2 AJ Gabourie, SV Suryavanshi, AB Farimani, E Pop 2D Materials 8 (1), 011001, 2020 | 40 | 2020 |
Real-time* multiple object tracking (MOT) for autonomous navigation A Agarwal, S Suryavanshi Technical report, 2017 | 24 | 2017 |
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 235-236, 2015 | 15 | 2015 |
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs CA Paz de Araujo, J Celinska, CR McWilliams, L Shifren, G Yeric, ... Apl Materials 10 (4), 2022 | 7 | 2022 |
Enhanced Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices KKH Smithe, CD English, SV Suryavanshi, E Pop arXiv preprint arXiv:1608.00987, 2016 | 6 | 2016 |
Stanford 2D Semiconductor (S2DS) Transistor Model SV Suryavanshi, E Pop Version 1.1. 0). nanoHUB. doi: 10.4231/D3ZC7RV9X, 2016 | 4 | 2016 |
High mobility in monolayer MoS2 devices grown by chemical vapor deposition KKH Smithe, CD English, SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 239-240, 2015 | 4 | 2015 |
Scaling theory of two-dimensional field effect transistors SV Suryavanshi, CD English, HSP Wong, E Pop arXiv preprint arXiv:2105.10791, 2021 | 3 | 2021 |
Improving electric contacts to two-dimensional semiconductors SV Suryavanshi, B Magyari-Kope, P Lim, C McClellan, KKH Smithe, ... arXiv preprint arXiv:2105.10792, 2021 | 3 | 2021 |
Bismuth-Doped Ferroelectric Devices L Shifren, CAP de Araujo, JB Celinska, SV Suryavanshi US Patent App. 16/248,496, 2020 | 3 | 2020 |