| Strain-driven light-polarization switching in deep ultraviolet nitride emitters TK Sharma, D Naveh, E Towe Physical Review B—Condensed Matter and Materials Physics 84 (3), 035305, 2011 | 79 | 2011 |
| Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition P Misra, TK Sharma, S Porwal, LM Kukreja Applied physics letters 89 (16), 2006 | 70 | 2006 |
| A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk … VK Dixit, S Porwal, SD Singh, TK Sharma, S Ghosh, SM Oak Journal of Physics D: Applied Physics 47 (6), 065103, 2014 | 57 | 2014 |
| Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si VK Dixit, T Ganguli, TK Sharma, SD Singh, R Kumar, S Porwal, P Tiwari, ... Journal of Crystal Growth 310 (15), 3428-3435, 2008 | 57 | 2008 |
| Observation of low resistivity and high mobility in Ga doped ZnO thin films grown by buffer assisted pulsed laser deposition RS Ajimsha, AK Das, P Misra, MP Joshi, LM Kukreja, R Kumar, ... Journal of Alloys and Compounds 638, 55-58, 2015 | 48 | 2015 |
| Temperature dependent photoluminescence processes in ZnO thin films grown on sapphire by pulsed laser deposition P Misra, TK Sharma, LM Kukreja Current Applied Physics 9 (1), 179-183, 2009 | 47 | 2009 |
| Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm TK Sharma, E Towe Journal of Applied Physics 107 (2), 2010 | 44 | 2010 |
| High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm TK Sharma, M Zorn, F Bugge, R Hulsewede, G Erbert, M Weyers IEEE Photonics Technology Letters 14 (7), 887-889, 2002 | 44 | 2002 |
| Studies on MOVPE growth of GaP epitaxial layer on Si (001) substrate and effects of annealing VK Dixit, T Ganguli, TK Sharma, R Kumar, S Porwal, V Shukla, A Ingale, ... Journal of crystal growth 293 (1), 5-13, 2006 | 39 | 2006 |
| Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy TK Sharma, S Porwal, R Kumar, S Kumar Review of scientific instruments 73 (4), 1835-1840, 2002 | 34 | 2002 |
| On ternary nitride substrates for visible semiconductor light-emitters TK Sharma, E Towe Applied Physics Letters 96 (19), 2010 | 32 | 2010 |
| Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells TK Sharma, R Jangir, S Porwal, R Kumar, T Ganguli, M Zorn, U Zeimer, ... Physical Review B—Condensed Matter and Materials Physics 80 (16), 165403, 2009 | 29 | 2009 |
| Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells SD Singh, VK Dixit, S Porwal, R Kumar, AK Srivastava, T Ganguli, ... Applied Physics Letters 97 (11), 2010 | 28 | 2010 |
| Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs TK Sharma, S Kumar, KC Rustagi Journal of applied physics 92 (10), 5959-5965, 2002 | 28 | 2002 |
| Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in AlxGa1−xAs/GaAs quantum wells by magneto-photoluminescence S Haldar, VK Dixit, G Vashisht, SK Khamari, S Porwal, TK Sharma, ... Scientific Reports 7 (1), 4905, 2017 | 27 | 2017 |
| Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN A Chatterjee, SK Khamari, VK Dixit, SM Oak, TK Sharma Journal of Applied Physics 118 (17), 2015 | 25 | 2015 |
| Effect of high dose γ-ray irradiation on GaAs pin photodetectors VK Dixit, SK Khamari, S Manwani, S Porwal, K Alexander, TK Sharma, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015 | 24 | 2015 |
| Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200nm VA Kheraj, CJ Panchal, PK Patel, BM Arora, TK Sharma Optics & Laser Technology 39 (7), 1395-1399, 2007 | 23 | 2007 |
| Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well SD Singh, S Porwal, TK Sharma, KC Rustagi Journal of applied physics 99 (6), 2006 | 23 | 2006 |
| Long-wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapour-phase epitaxy TK Sharma, MR Gokhale, BM Arora Journal of Crystal Growth 213 (3-4), 241-249, 2000 | 23 | 2000 |
Dr. V K DIXITProfessor (Associate) at Homi Bhabha National Institute & Scientist (SO/H) at RRCAT在 rrcat.gov.in 的电子邮件经过验证
