| Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes N Prakash, M Singh, G Kumar, A Barvat, K Anand, P Pal, SP Singh, ... Applied Physics Letters 109 (24), 2016 | 99 | 2016 |
| Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates A Barvat, N Prakash, B Satpati, SS Singha, G Kumar, DK Singh, A Dogra, ... Journal of Applied Physics 122 (1), 2017 | 46 | 2017 |
| Binary Multifunctional Ultrabroadband Self‐Powered g‐C3N4/Si Heterojunction High‐Performance Photodetector N Prakash, G Kumar, M Singh, A Barvat, P Pal, SP Singh, HK Singh, ... Advanced Optical Materials 6 (14), 1800191, 2018 | 40 | 2018 |
| Visible‐Blind ZnMgO Colloidal Quantum Dot Downconverters Expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and Enable UV‐Band Discrimination A Saha, G Kumar, S Pradhan, G Dash, R Viswanatha, G Konstantatos Advanced Materials 34 (10), 2109498, 2022 | 24 | 2022 |
| Low‐Threshold, Highly Stable Colloidal Quantum Dot Short‐Wave Infrared Laser enabled by Suppression of Trap‐Assisted Auger Recombination N Taghipour, GL Whitworth, A Othonos, M Dalmases, S Pradhan, Y Wang, ... Advanced Materials 34 (3), 2107532, 2022 | 24 | 2022 |
| Hybrid 2D‐QD MoS2–PbSe Quantum Dot Broadband Photodetectors with High‐Sensitivity and Room‐Temperature Operation at 2.5 µm B Kundu, O Özdemir, M Dalmases, G Kumar, G Konstantatos Advanced Optical Materials 9 (22), 2101378, 2021 | 23 | 2021 |
| Large bandgap reduced graphene oxide (rGO) based n-p+ heterojunction photodetector with improved NIR performance M Singh, G Kumar, N Prakash, SP Khanna, P Pal, SP Singh Semiconductor Science and Technology 33 (4), 045012, 2018 | 21 | 2018 |
| Long‐Term, High‐Voltage, and High‐Temperature Stable Dual‐Mode, Low Dark Current Broadband Ultraviolet Photodetector Based on Solution‐Cast r‐GO on MBE‐Grown Highly Resistive GaN N Prakash, G Kumar, M Singh, SP Singh, B Satpati, SP Khanna, P Pal Advanced Optical Materials 7 (18), 1900340, 2019 | 20 | 2019 |
| Solution-Processed-2D on 3D Heterojunction UV–Visible Photodetector for Low-Light Applications G Kumar, N Prakash, M Singh, A Chakravorty, D Kabiraj, SP Singh, P Pal, ... ACS Applied Electronic Materials 1 (8), 1489-1497, 2019 | 20 | 2019 |
| Electronic structure of the PLD grown mixed phase MoS2/GaN interface and its thermal annealing effect A Barvat, N Prakash, G Kumar, DK Singh, A Dogra, SP Khanna, P Pal Current Applied Physics 18 (2), 170-177, 2018 | 20 | 2018 |
| Edge-contact large area hetero-structure fast photodetector utilizing two-dimensional r-GO on three-dimensional GaN material interface N Prakash, G Kumar, M Singh, SP Singh, P Pal, SP Khanna Sensors and Actuators A: Physical 303, 111720, 2020 | 9 | 2020 |
| Exploration of trap levels in GaN and Al0. 2Ga0. 8N layers by temperature-dependent photoconductivity measurement N Prakash, G Kumar, A Barvat, K Anand, B Choursia, P Pal, SP Khanna Materials Today: Proceedings 5 (1), 2132-2138, 2018 | 2 | 2018 |
| Broadband Photodetector with Lateral n-rGO/p+Si Heterojunction M Singh, G Kumar, N Prakash, SP Khanna, P Pal, SP Singh The Physics of Semiconductor Devices: Proceedings of IWPSD 2017, 99-104, 2019 | | 2019 |
Prabir PalPrincipal Scientist, CSIR-CGCRI, Kolkata, 700032在 cgcri.res.in 的电子邮件经过验证
