| Efficient cerium-based sol–gel derived phosphors in different garnet matrices for light-emitting diodes A Katelnikovas, J Jurkevičius, K Kazlauskas, P Vitta, T Jüstel, A Kareiva, ... Journal of alloys and compounds 509 (21), 6247-6251, 2011 | 38 | 2011 |
| Stimulated emission in AlGaN/AlGaN quantum wells with different Al content J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ... Applied Physics Letters 100 (8), 2012 | 33 | 2012 |
| Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ... Journal of Physics D: Applied Physics 48 (46), 465307, 2015 | 30 | 2015 |
| Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ... Journal of Physics D: Applied Physics 49 (14), 145110, 2016 | 26 | 2016 |
| Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells J Mickevičius, J Jurkevičius, G Tamulaitis, MS Shur, M Shatalov, J Yang, ... Optics Express 22 (102), A491-A497, 2014 | 25 | 2014 |
| Photoluminescence efficiency droop and stimulated recombination in GaN epilayers J Mickevičius, J Jurkevičius, MS Shur, J Yang, R Gaska, G Tamulaitis Optics Express 20 (23), 25195-25200, 2012 | 25 | 2012 |
| Stimulated emission due to localized and delocalized carriers in Al0. 35Ga0. 65N/Al0. 49Ga0. 51N quantum wells J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ... Applied Physics Letters 101 (4), 2012 | 20 | 2012 |
| Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ... physica status solidi (b) 252 (5), 1138-1141, 2015 | 19 | 2015 |
| Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers P Ščajev, J Jurkevičius, J Mickevičius, K Jarašiūnas, H Kato Diamond and Related Materials 57, 9-16, 2015 | 17 | 2015 |
| Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells J Mickevičius, J Jurkevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, ... AIP advances 6 (4), 2016 | 13 | 2016 |
| Photoluminescence efficiency in AlGaN quantum wells G Tamulaitis, J Mickevičius, J Jurkevičius, MS Shur, M Shatalov, J Yang, ... Physica B: Condensed Matter 453, 40-42, 2014 | 12 | 2014 |
| Photoluminescence efficiency of BGaN epitaxial layers with high boron content J Jurkevičius, J Mickevičius, A Kadys, M Kolenda, G Tamulaitis Physica B: Condensed Matter 492, 23-26, 2016 | 11 | 2016 |
| The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface Ž Podlipskas, J Jurkevičius, A Kadys, S Miasojedovas, T Malinauskas, ... Scientific reports 9 (1), 17346, 2019 | 10 | 2019 |
| Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers J Mickevičius, J Jurkevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, ... Journal of Physics D: Applied Physics 48 (27), 275105, 2015 | 9 | 2015 |
| Efficiency droop and carrier transport in AlGaN epilayers and heterostructures J Mickevičius, G Tamulaitis, J Jurkevičius, MS Shur, M Shatalov, J Yang, ... physica status solidi (b) 252 (5), 961-964, 2015 | 8 | 2015 |
| Extreme radiation resistance in InN Ž Podlipskas, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, ... Journal of Alloys and Compounds 789, 48-55, 2019 | 7 | 2019 |
| Nonradiative recombination, carrier localization, and emission efficiency of AlGaN epilayers with different Al content J Mickevičius, Ž Podlipskas, R Aleksiejūnas, A Kadys, J Jurkevičius, ... Journal of Electronic Materials 44, 4706-4709, 2015 | 6 | 2015 |
| Influence of proton irradiation on carrier mobility in InN epitaxial layers A Mekys, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, G Tamulaitis Thin Solid Films 692, 137619, 2019 | 4 | 2019 |
| Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers Ž Podlipskas, R Aleksiejūnas, S Nargelas, J Jurkevičius, J Mickevičius, ... Current Applied Physics 16 (6), 633-637, 2016 | 3 | 2016 |
| Photoluminescence efficiency in wide-band-gap iii-nitride semiconductors and their heterostructures J Jurkevičius Vilniaus universitetas, 2016 | 2 | 2016 |
