| Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation … Z Zhang, Q Qian, B Li, KJ Chen ACS applied materials & interfaces 10 (20), 17419-17426, 2018 | 230 | 2018 |
| The dependence of graphene Raman D-band on carrier density J Liu, Q Li, Y Zou, Q Qian, Y Jin, G Li, K Jiang, S Fan Nano letters 13 (12), 6170-6175, 2013 | 175 | 2013 |
| Tunable Properties of Novel Ga2O3 Monolayer for Electronic and Optoelectronic Applications Y Liao, Z Zhang, Z Gao, Q Qian, M Hua ACS applied materials & interfaces 12 (27), 30659-30669, 2020 | 97 | 2020 |
| Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen IEEE Electron Device Letters 38 (7), 929-932, 2017 | 85 | 2017 |
| 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen IEEE Electron Device Letters 39 (2), 260-263, 2017 | 69 | 2017 |
| Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen Scientific reports 6, 27676-27676, 2016 | 57 | 2016 |
| Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation Z Zhang, B Huang, Q Qian, Z Gao, X Tang, B Li Apl Materials 8 (4), 2020 | 51 | 2020 |
| Two-dimensional gallium oxide monolayer for gas-sensing application J Zhao, X Huang, Y Yin, Y Liao, H Mo, Q Qian, Y Guo, X Chen, Z Zhang, ... The Journal of Physical Chemistry Letters 12 (24), 5813-5820, 2021 | 49 | 2021 |
| Chirality-Dependent Second Harmonic Generation of MoS2 Nanoscroll with Enhanced Efficiency Q Qian, R Zu, Q Ji, GS Jung, K Zhang, Y Zhang, MJ Buehler, J Kong, ... ACS nano 14 (10), 13333-13342, 2020 | 45 | 2020 |
| Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors Q Qian, G Li, Y Jin, J Liu, Y Zou, K Jiang, S Fan, Q Li ACS nano 8 (9), 9597-9605, 2014 | 45 | 2014 |
| Defect Creation in WSe2 with Microsecond Photoluminescence Lifetime by Focused Ion Beam Irradiation Q Qian, L Peng, NP Lopez, K Fujisawa, K Zhang, X Zhang, TH Choudhury, ... Nanoscale 12 (3), 2047-2056, 2020 | 43 | 2020 |
| In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study Q Qian, Z Zhang, KJ Chen Langmuir : the ACS Journal of Surfaces and Colloids 34 (8), 2882–2889, 2018 | 42 | 2018 |
| 2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current Q Qian, J Lei, J Wei, Z Zhang, G Tang, K Zhong, Z Zheng, KJ Chen npj 2D Materials and Applications 3, 24, 2019 | 37 | 2019 |
| Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment Q Qian, Z Zhang, M Hua, G Tang, J Lei, F Lan, Y Xu, R Yan, KJ Chen Nanotechnology 28 (17), 175202, 2017 | 37 | 2017 |
| High quantum efficiency of stable Sb‐based perovskite‐like halides toward white light emission and flexible X‐ray imaging Q Mo, Q Qian, Y Shi, W Cai, S Zhao, Z Zang Advanced Optical Materials 10 (23), 2201509, 2022 | 35 | 2022 |
| Solvent‐free synthesis of inorganic rubidium copper halides for efficient wireless light communication and X‐ray imaging S Zhao, Z Jia, Y Huang, Q Qian, Q Lin, Z Zang Advanced Functional Materials 33 (47), 2305858, 2023 | 33 | 2023 |
| Reverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen IEEE Electron Device Letters 39 (7), 1003-1006, 2018 | 33 | 2018 |
| Layer-dependent second-order Raman intensity of MoS2 and WSe2: Influence of intervalley scattering Q Qian, Z Zhang, KJ Chen Phys. Rev. B 97 (16), 165409, 2018 | 31 | 2018 |
| An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss J Lei, J Wei, G Tang, Q Qian, M Hua, Z Zhang, Z Zheng, KJ Chen 2017 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2017 | 31 | 2017 |
| Revealing the nitridation effects on gan surface by first-principles calculation and X-Ray/ultraviolet photoemission spectroscopy Z Zhang, B Li, Q Qian, X Tang, M Hua, B Huang, KJ Chen IEEE Transactions on Electron Devices 64 (10), 4036-4043, 2017 | 29 | 2017 |
