| Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers R Aleksiejūnas, M Sūdžius, T Malinauskas, J Vaitkus, K Jarašiūnas, ... Applied physics letters 83 (6), 1157-1159, 2003 | 97 | 2003 |
| Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives P Scajev, C Qin, R Aleksieju̅nas, P Baronas, S Miasojedovas, T Fujihara, ... The journal of physical chemistry letters 9 (12), 3167-3172, 2018 | 53 | 2018 |
| All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE-grown GaN T Malinauskas, R Aleksiejūnas, K Jarašiūnas, B Beaumont, P Gibart, ... Journal of crystal growth 300 (1), 223-227, 2007 | 53 | 2007 |
| Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers T Malinauskas, K Jarašiūnas, R Aleksiejunas, D Gogova, B Monemar, ... physica status solidi (b) 243 (7), 1426-1430, 2006 | 50 | 2006 |
| Investigation of nonequilibrium carrier transport in vanadium-doped CdTe and CdZnTe crystals using the time-resolved four-wave mixing technique M Sudzius, R Aleksiejunas, K Jarasiunas, D Verstraeten, JC Launay Semiconductor science and technology 18 (4), 367, 2003 | 44 | 2003 |
| Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites P Scajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, C Qin, ... The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017 | 41 | 2017 |
| The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique K Neimontas, T Malinauskas, R Aleksiejūnas, M Sūdžius, K Jarašiūnas, ... Semiconductor science and technology 21 (7), 952, 2006 | 41 | 2006 |
| Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers K Jarasiunas, R Aleksiejunas, T Malinauskas, V Gudelis, T Tamulevicius, ... Review of Scientific Instruments 78 (3), 2007 | 40 | 2007 |
| Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures R Aleksiejūnas, K Gelžinytė, S Nargelas, K Jarašiūnas, M Vengris, ... Applied Physics Letters 104 (2), 2014 | 38 | 2014 |
| Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate RS Qhalid Fareed, JP Zhang, R Gaska, G Tamulaitis, J Mickevicius, ... physica status solidi (c) 2 (7), 2095-2098, 2005 | 36 | 2005 |
| Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers P Ščajev, A Usikov, V Soukhoveev, R Aleksiejūnas, K Jarašiūnas Applied Physics Letters 98 (20), 2011 | 35 | 2011 |
| Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique R Aleksiejūnas, M Sūdžius, V Gudelis, T Malinauskas, K Jarašiūnas, ... physica status solidi (c), 2686-2690, 2003 | 35 | 2003 |
| Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ... Journal of Physics D: Applied Physics 49 (14), 145110, 2016 | 26 | 2016 |
| Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers J Mickevičius, R Aleksiejūnas, MS Shur, G Tamulaitis, RS Qhalid Fareed, ... physica status solidi (a) 202 (1), 126-130, 2005 | 26 | 2005 |
| Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers J Mickevičius, R Aleksiejūnas, MS Shur, S Sakalauskas, G Tamulaitis, ... Applied Physics Letters 86 (4), 2005 | 22 | 2005 |
| Characterization of differently grown GaN epilayers by time‐resolved four‐wave mixing technique K Jarašiūnas, T Malinauskas, R Aleksiejūnas, M Sūdžius, E Frayssinet, ... physica status solidi (a) 202 (4), 566-571, 2005 | 19 | 2005 |
| Optical and electron beam studies of carrier transport in quasibulk GaN Y Lin, E Flitsyian, L Chernyak, T Malinauskas, R Aleksiejunas, ... Applied Physics Letters 95 (9), 2009 | 18 | 2009 |
| Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures K Jarašiūnas, R Aleksiejūnas, T Malinauskas, M Sūdžius, S Miasojedovas, ... physica status solidi (a) 202 (5), 820-823, 2005 | 18 | 2005 |
| Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ... Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013 | 17 | 2013 |
| Fast optical nonlinearity induced by space-charge waves in dc-biased GaAs L Subačius, I Kašalynas, R Aleksiejūnas, K Jarašiūnas Applied physics letters 83 (8), 1557-1559, 2003 | 17 | 2003 |
