| Scaling of dopant segregation Schottky barrier using metal strip buried oxide MOSFET and its comparison with conventional device P Kumar, WasimArif, B Bhowmick Silicon 10, 811-820, 2018 | 30 | 2018 |
| A comprehensive review of recent progress, prospect and challenges of silicon carbide and its applications E Manikandan, L Agarwal Silicon 14 (18), 12887-12900, 2022 | 29 | 2022 |
| Source-drain junction engineering Schottky barrier MOSFETs and their mixed mode application P Kumar, B Bhowmick Silicon 12 (4), 821-830, 2020 | 24 | 2020 |
| Suppression of ambipolar conduction and investigation of RF performance characteristics of gate‐drain underlap SiGe Schottky barrier field effect transistor P Kumar, B Bhowmick Micro & Nano Letters 13 (5), 626-630, 2018 | 22 | 2018 |
| 2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET P Kumar, B Bhowmick Journal of Computational Electronics 16 (3), 658-665, 2017 | 22 | 2017 |
| 2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET P Kumar, B Bhowmick Superlattices and Microstructures 109, 805-814, 2017 | 22 | 2017 |
| A physics‐based threshold voltage model for hetero‐dielectric dual material gate Schottky barrier MOSFET P Kumar, B Bhowmick International Journal of Numerical Modelling: Electronic Networks, Devices …, 2018 | 19 | 2018 |
| Impact of ferroelectric on the electrical characteristics of silicon–germanium based heterojunction Schottky barrier FET A Vinod, P Kumar, B Bhowmick AEU-International Journal of Electronics and Communications 107, 257-263, 2019 | 18 | 2019 |
| Comparative analysis of hetero gate dielectric hetero structure tunnel FET and Schottky Barrier FET with n+ pocket doping for suppression of ambipolar conduction and improved … P Kumar, B Bhowmick Journal of Nanoelectronics and Optoelectronics 14 (2), 261-271, 2019 | 12 | 2019 |
| Analysis and simulation of Schottky tunneling using Schottky barrier FET with 2-D analytical modeling P Kumar, A Vinod, K Dharavath, B Bhowmick Silicon 14 (3), 831-837, 2022 | 11 | 2022 |
| Recent progress on sensitivity analysis of schottky field effect transistor based biosensors P Kumar, P Esakki, L Agarwal, PeddaKrishna, S Kale, B Bhowmick Silicon 15 (1), 25-35, 2023 | 7 | 2023 |
| Recent study on Schottky tunnel field effect transistor for biosensing applications P Anusuya, P Kumar, P Esakki, L Agarwal Silicon 14 (16), 10187-10198, 2022 | 5 | 2022 |
| Performance analysis of double gate dielectric modulation in Schottky FET as biomolecule sensor P Kumar Silicon 14 (9), 4767-4773, 2022 | 4 | 2022 |
| High-frequency performance characteristics of the double-gate schottky barrier tunnel field effect transistor in analog and radio-frequency applications V Shalini, P Kumar ECS Journal of Solid State Science and Technology 12 (9), 093003, 2023 | 1 | 2023 |
| Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications PAP Kumar Multiscale and Multidisciplinary Modeling, Experiments and Design, 2024 | | 2024 |
Dr. BRINDA BHOWMICKProfessor, NIT Silchar在 ece.nits.ac.in 的电子邮件经过验证
Dr. BRINDA BHOWMICKProfessor, NIT Silchar在 ece.nits.ac.in 的电子邮件经过验证