| Process for producing zirconium oxide thin films M Putkonen US Patent 7,754,621, 2010 | 508 | 2010 |
| Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high‐k dielectrics and other … L Niinistö, M Nieminen, J Päiväsaari, J Niinistö, M Putkonen, M Nieminen physica status solidi (a) 201 (7), 1443-1452, 2004 | 468 | 2004 |
| Method of depositing rare earth oxide thin films J Niinistō, M Putkonen, M Ritala, P Räisänen, A Niskanen, M Leskelä US Patent 6,858,546, 2005 | 453 | 2005 |
| Formation and stability of lanthanum oxide thin films deposited from β-diketonate precursor M Nieminen, M Putkonen, L Niinistö Applied surface science 174 (2), 155-166, 2001 | 342 | 2001 |
| A comparative study on lanthanide oxide thin films grown by atomic layer deposition J Päiväsaari, M Putkonen, L Niinistö Thin Solid Films 472 (1-2), 275-281, 2005 | 243 | 2005 |
| Process for producing oxide thin films M Putkonen US Patent 6,548,424, 2003 | 219 | 2003 |
| Effect of annealing in processing of strontium titanate thin films by ALD A Kosola, M Putkonen, LS Johansson, L Niinistö Applied Surface Science 211 (1-4), 102-112, 2003 | 189 | 2003 |
| Low‐Temperature ALE Deposition of Y2O3 Thin Films from β‐Diketonate Precursors M Putkonen, T Sajavaara, LS Johansson, L Niinistö Chemical Vapor Deposition 7 (1), 44-50, 2001 | 174 | 2001 |
| Atomic layer deposition of polyimide thin films M Putkonen, J Harjuoja, T Sajavaara, L Niinistö Journal of Materials Chemistry 17 (7), 664-669, 2007 | 169 | 2007 |
| Properties of AlN grown by plasma enhanced atomic layer deposition M Bosund, T Sajavaara, M Laitinen, T Huhtio, M Putkonen, VM Airaksinen, ... Applied Surface Science 257 (17), 7827-7830, 2011 | 153 | 2011 |
| Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors J Päiväsaari, M Putkonen, T Sajavaara, L Niinistö Journal of Alloys and Compounds 374 (1-2), 124-128, 2004 | 146* | 2004 |
| Processing of Y2O3 thin films by atomic layer deposition from cyclopentadienyl-type compounds and water as precursors J Niinistö, M Putkonen, L Niinistö Chemistry of materials 16 (15), 2953-2958, 2004 | 145 | 2004 |
| Organometallic precursors for atomic layer deposition M Putkonen, L Niinistö Precursor Chemistry of Advanced Materials, 125-145, 2005 | 139 | 2005 |
| Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy M Nieminen, T Sajavaara, E Rauhala, M Putkonen, L Niinistö Journal of Materials Chemistry 11 (9), 2340-2345, 2001 | 135 | 2001 |
| Zirconia thin films by atomic layer epitaxy. A comparative study on the use of novel precursors with ozone M Putkonen, L Niinistö Journal of Materials Chemistry 11 (12), 3141-3147, 2001 | 132 | 2001 |
| Process for producing oxide thin films M Putkonen US Patent 6,777,353, 2004 | 127 | 2004 |
| Atomic layer deposition of lithium containing thin films M Putkonen, T Aaltonen, M Alnes, T Sajavaara, O Nilsen, H Fjellvåg Journal of Materials Chemistry 19 (46), 8767-8771, 2009 | 113 | 2009 |
| Method of depositing rare earth oxide thin films J Niinistö, M Putkonen, M Ritala, P Räisänen, A Niskanen, M Leskelä US Patent 7,498,272, 2009 | 103 | 2009 |
| Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films M Putkonen, T Sajavaara, L Niinistö Journal of Materials Chemistry 10 (8), 1857-1861, 2000 | 103 | 2000 |
| Gadolinium oxide thin films by atomic layer deposition J Niinistö, N Petrova, M Putkonen, L Niinistö, K Arstila, T Sajavaara Journal of crystal growth 285 (1-2), 191-200, 2005 | 102 | 2005 |
Jaakko NiinistöDepartment of Chemistry, University of Helsinki, Finland在 helsinki.fi 的电子邮件经过验证
