| A white random laser SW Chang, WC Liao, YM Liao, HI Lin, HY Lin, WJ Lin, SY Lin, P Perumal, ... Scientific reports 8 (1), 2720, 2018 | 89 | 2018 |
| Inkjet‐printed random lasers YM Liao, WC Liao, SW Chang, CF Hou, CT Tai, CY Su, YT Hsu, MH Wu, ... Advanced Materials Technologies 3 (12), 1800214, 2018 | 23 | 2018 |
| Strain effects on rashba spin‐orbit coupling of 2D hole gases in GeSn/Ge heterostructures CT Tai, PY Chiu, CY Liu, HS Kao, CT Harris, TM Lu, CT Hsieh, SW Chang, ... Advanced Materials 33 (26), 2007862, 2021 | 22 | 2021 |
| Self-Healing Nanophotonics: Robust and Soft Random Lasers YT Hsu, CT Tai, HM Wu, CF Hou, YM Liao, WC Liao, G Haider, YC Hsiao, ... ACS nano 13 (8), 8977-8985, 2019 | 16 | 2019 |
| Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions PT Madathil, KA Villegas Rosales, CT Tai, YJ Chung, LN Pfeiffer, ... Physical review letters 130 (22), 226503, 2023 | 5 | 2023 |
| Recent progress in undoped group-IV heterostructures for quantum technologies CT Tai, JY Li Materials for Quantum Technology, 2024 | 2 | 2024 |
| Topological phase transition between composite-fermion and Pfaffian daughter states near {\nu}= 1/2 FQHS SK Singh, C Wang, CT Tai, CS Calhoun, A Gupta, KW Baldwin, ... arXiv preprint arXiv:2309.00111, 2023 | 2 | 2023 |
| Topological phase transition between Jain states and daughter states of the ν = 1/2 fractional quantum Hall state SK Singh, C Wang, CT Tai, CS Calhoun, KA Villegas Rosales, ... Nature Physics, 1-6, 2024 | 1 | 2024 |
| Modulation of Turn-On Voltage in Undoped Si/SiGe Heterostructure Insulated-Gate Field-Effect Transistors (IGFETs) for Cryogenic Memory Applications. NW Hsu, TM Wang, CT Tai, CT Harris, TM Lu, JY Li Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2019 | 1 | 2019 |
| Topological phase transition between composite fermion and Pfaffian daughter states near ν= 1/2 fractional quantum Hall state SK Singh, C Wang, CT Tai, C Calhoun, A Gupta, K Baldwin, L Pfeiffer, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Universality of critical exponents in the fractional quantum Hall regime CT Tai, PT Madathil, KV Rosales, YJ Chung, L Pfeiffer, K Baldwin, K West, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Weak Antilocalization of Two-Dimensional Hole Gases in a Modulation-Doped GeSn/Ge Heterostructure ZW Chen, CW Kiang, CW Kiang, CT Tai, HC Wang, MJ Lin, Y Chuang, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Quantum point contacts on a GeSn/Ge heterostructure TY Li, YJ Wu, HY Tsao, MJ Lin, CY Liu, CT Tai, JY Li APS March Meeting Abstracts 2023, F52. 004, 2023 | | 2023 |
| Critical exponents of the plateau-to-plateau transitions in the fractional quantum Hall regime CT Tai, PT Madathil, K Villegas Rosales, YJ Chung, L Pfeiffer, K Baldwin, ... APS March Meeting Abstracts 2023, Y25. 011, 2023 | | 2023 |
| Formation of tubular conduction channel in a SiGe (P)/Si core/shell nanowire heterostructure X Wang, YC Lin, CT Tai, SW Lee, TM Lu, SHR Shin, SJ Addamane, ... APL Materials 10 (11), 2022 | | 2022 |
| High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures CY Liu, Y Chuang, CT Tai, HS Kao, KY Tien, JY Li 2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 1-2, 2021 | | 2021 |
| Weak anti-localization in undoped Ge/GeSn heterostructures. CT Tai, CY Liu, TM Wang, CT Harris, TM Lu, JY Li Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2020 | | 2020 |
| Demonstration of two-dimensional hole gases (2DHG) in strained GeSn quantum wells. JY Li, CT Tai, CY Liu, TM Wang, CT Harris, TM Lu Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2020 | | 2020 |
| CV Characteristics of Undoped Si/SiGe Heterostructure Insulated-Gate Field-Effect Transistors. NW Hsu, TM Wang, CT Tai, CT Harris, TM Lu, JY Li Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2019 | | 2019 |
| A White Random Laser YT Hsu, SW Chang, WC Liao, YM Liao, CF Hou, YH Chen, CT Tai, CY Su, ... APS March Meeting Abstracts 2019, F23. 011, 2019 | | 2019 |
