| Growth of graphene on Cu by plasma enhanced chemical vapor deposition T Terasawa, K Saiki Carbon 50 (3), 869-874, 2012 | 225 | 2012 |
| Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur‐terminated GaAs {111} surfaces K Ueno, T Shimada, K Saiki, A Koma Applied physics letters 56 (4), 327-329, 1990 | 150 | 1990 |
| Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica K Ueno, K Saiki, T Shimada, A Koma Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990 | 144 | 1990 |
| Studies on an (NH4) 2Sx-treated GaAs surface using AES, LEELS and RHEED H Oigawa, JF Fan, Y Nannichi, K Ando, K Saiki, A Koma Japanese Journal of Applied Physics 28 (3A), L340, 1989 | 137 | 1989 |
| Accumulation and depletion layer thicknesses in organic field effect transistors M Kiguchi, M Nakayama, K Fujiwara, K Ueno, T Shimada, K Saiki Japanese Journal of Applied Physics 42 (12A), L1408, 2003 | 130 | 2003 |
| Synthesis of nitrogen-doped graphene on Pt (111) by chemical vapor deposition G Imamura, K Saiki The Journal of Physical Chemistry C 115 (20), 10000-10005, 2011 | 128 | 2011 |
| Preparation and characterization of vanadyl-phthalocyanine ultrathin films grown on KBr and KCl by molecular beam epitaxy H Tada, KSK Saiki, AKA Koma Japanese journal of applied physics 30 (2B), L306, 1991 | 124 | 1991 |
| Van der waals epitaxial growth of C60 film on a cleaved face of MoS2 M Sakurai, H Tada, KSK Saiki, AKA Koma Japanese journal of applied physics 30 (11A), L1892, 1991 | 116 | 1991 |
| Electric-field-induced charge injection or exhaustion in organic thin film transistor M Kiguchi, M Nakayama, T Shimada, K Saiki Physical Review B—Condensed Matter and Materials Physics 71 (3), 035332, 2005 | 114 | 2005 |
| Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors D Guo, S Ikeda, K Saiki, H Miyazoe, K Terashima Journal of applied physics 99 (9), 2006 | 110 | 2006 |
| Heteroepitaxy of a two-dimensional material on a three-dimensional material A Koma, K Saiki, Y Sato Applied surface science 41, 451-456, 1990 | 109 | 1990 |
| Surface-Mediated Visible-Light Photo-oxidation on Pure TiO2(001) H Ariga, T Taniike, H Morikawa, M Tada, BK Min, K Watanabe, ... Journal of the American Chemical Society 131 (41), 14670-14672, 2009 | 98 | 2009 |
| Application of Van der Waals epitaxy to highly heterogeneous systems K Saiki, K Ueno, T Shimada, A Koma Journal of Crystal Growth 95 (1-4), 603-606, 1989 | 97 | 1989 |
| Control of work function of graphene by plasma assisted nitrogen doping K Akada, T Terasawa, G Imamura, S Obata, K Saiki Applied Physics Letters 104 (13), 2014 | 89 | 2014 |
| Atomic and electronic structure of an unreconstructed polar MgO (111) thin film on Ag (111) M Kiguchi, S Entani, K Saiki, T Goto, A Koma Physical Review B 68 (11), 115402, 2003 | 85 | 2003 |
| Heteroepitaxial growth by Van der Waals interaction in one-, two-and three-dimensional materials A Koma, K Ueno, K Saiki Journal of crystal growth 111 (1-4), 1029-1032, 1991 | 84 | 1991 |
| Heteroepitaxy of layered semiconductor GaSe on a GaAs (111) B surface K Ueno, H Abe, KSK Saiki, AKA Koma Japanese journal of applied physics 30 (8A), L1352, 1991 | 82 | 1991 |
| In-situ observation of defect formation in CaF2 (111) surfaces induced by low energy electron bombardment K Saiki, Y Sato, K Ando, A Koma Surface Science 192 (1), 1-10, 1987 | 82 | 1987 |
| Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance D Guo, T Miyadera, S Ikeda, T Shimada, K Saiki Journal of Applied Physics 102 (2), 2007 | 78 | 2007 |
| Growth of nanographite on Pt (111) and its edge state S Entani, S Ikeda, M Kiguchi, K Saiki, G Yoshikawa, I Nakai, H Kondoh, ... Applied Physics Letters 88 (15), 2006 | 77 | 2006 |
