| Fast and Highly Sensitive Ionic‐Polymer‐Gated WS2–Graphene Photodetectors JD Mehew, S Unal, E Torres Alonso, GF Jones, S Fadhil Ramadhan, ... Advanced Materials 29 (23), 1700222, 2017 | 127 | 2017 |
| Leakage and field emission in side-gate graphene field effect transistors A Di Bartolomeo, F Giubileo, L Iemmo, F Romeo, S Russo, S Unal, ... Applied Physics Letters 109 (2), 2016 | 95 | 2016 |
| Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate A Di Bartolomeo, F Giubileo, L Iemmo, F Romeo, S Russo, S Unal, ... arXiv preprint arXiv:1601.04476, 2016 | 95* | 2016 |
| A data-driven approach to river discharge forecasting in the Himalayan region: Insights from Aglar and Paligaad rivers V Kumar, S Unal, SK Bhagat, T Tiyasha Results in Engineering 22, 102044, 2024 | 2 | 2024 |
| Ion implanted Au nanoparticles in surface plasmon temperature sensing S Unal Materials Letters 305, 130793, 2021 | 2 | 2021 |
| Ionic Polymer Gated WS2-Graphene Photodetectors JD Mehew, S Unal, ET Alonso, GF Jones, SF Ramadhar, MF Craciun, ... 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-1, 2018 | | 2018 |
| Field-Effect Transistors and Optoelectronic Devices Based on Emerging Atomically Thin Materials S Unal PQDT-UK & Ireland, 2017 | | 2017 |
| Leakage and field emission in side-gate graphene field effect transistors F Giubileo, L Iemmo, G Luongo, S Russo, S Unal, A DI BARTOLOMEO GM-2016 Graphene and related Materials: properties and applications, 112-112, 2016 | | 2016 |
| SUSY based displaced vertices in ATLAS detector S Unal State University of New York at Albany, 2011 | | 2011 |
Saverio RussoPhysics, University of Exeter在 exeter.ac.uk 的电子邮件经过验证
