| Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness A Asenov, S Kaya, AR Brown IEEE Transactions on Electron Devices 50 (5), 1254-1260, 2003 | 739 | 2003 |
| Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs A Asenov, AR Brown, JH Davies, S Kaya, G Slavcheva IEEE Transactions on Electron Devices 50 (9), 1837-1852, 2003 | 730 | 2003 |
| Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs G Roy, AR Brown, F Adamu-Lema, S Roy, A Asenov IEEE Transactions on Electron Devices 53 (12), 3063-3070, 2006 | 331 | 2006 |
| RTS amplitudes in decananometer MOSFETs: 3-D simulation study A Asenov, R Balasubramaniam, AR Brown, JH Davies IEEE Transactions on Electron Devices 50 (3), 839-845, 2003 | 321 | 2003 |
| Statistical variability and reliability in nanoscale FinFETs X Wang, AR Brown, B Cheng, A Asenov 2011 International Electron Devices Meeting, 5.4. 1-5.4. 4, 2011 | 318 | 2011 |
| Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study A Asenov, G Slavcheva, AR Brown, JH Davies, S Saini IEEE Transactions on Electron Devices 48 (4), 722-729, 2001 | 279 | 2001 |
| Poly-Si-gate-related variability in decananometer MOSFETs with conventional architecture AR Brown, G Roy, A Asenov IEEE Transactions on Electron Devices 54 (11), 3056-3063, 2007 | 164 | 2007 |
| Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study X Wang, AR Brown, N Idris, S Markov, G Roy, A Asenov IEEE Transactions on Electron Devices 58 (8), 2293-2301, 2011 | 156 | 2011 |
| Impact of metal gate granularity on threshold voltage variability: A full-scale three-dimensional statistical simulation study AR Brown, NM Idris, JR Watling, A Asenov IEEE Electron Device Letters 31 (11), 1199-1201, 2010 | 138 | 2010 |
| Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter AR Brown, A Asenov, JR Watling IEEE Transactions on Nanotechnology 1 (4), 195-200, 2002 | 123 | 2002 |
| Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation K Samsudin, B Cheng, AR Brown, S Roy, A Asenov Solid-State Electronics 50 (1), 86-93, 2006 | 116 | 2006 |
| Hierarchical approach to" atomistic" 3-D MOSFET simulation A Asenov, AR Brown, JH Davies, S Saini IEEE Transactions on computer-aided design of integrated circuits and …, 1999 | 111 | 1999 |
| Quantitative evaluation of statistical variability sources in a 45-nm technological node LP N-MOSFET A Cathignol, B Cheng, D Chanemougame, AR Brown, K Rochereau, ... IEEE Electron Device Letters 29 (6), 609-611, 2008 | 108 | 2008 |
| Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors A Martinez, M Aldegunde, N Seoane, AR Brown, JR Barker, A Asenov IEEE Transactions on Electron Devices 58 (8), 2209-2217, 2011 | 84 | 2011 |
| Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study N Seoane, A Martinez, AR Brown, JR Barker, A Asenov IEEE Transactions on electron devices 56 (7), 1388-1395, 2009 | 82 | 2009 |
| Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques A Asenov, AR Brown, G Roy, B Cheng, C Alexander, C Riddet, U Kovac, ... Journal of computational electronics 8 (3-4), 349-373, 2009 | 77 | 2009 |
| Variability aware simulation based design-technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ... IEEE Transactions on Electron Devices 62 (6), 1682-1690, 2015 | 72 | 2015 |
| Origin of the asymmetry in the magnitude of the statistical variability of n-and p-channel poly-Si gate bulk MOSFETs A Asenov, A Cathignol, B Cheng, KP McKenna, AR Brown, AL Shluger, ... IEEE Electron Device Letters 29 (8), 913-915, 2008 | 67 | 2008 |
| Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study A Martinez, N Seoane, AR Brown, JR Barker, A Asenov IEEE Transactions on Electron Devices 57 (7), 1626-1635, 2010 | 66 | 2010 |
| Quantum corrections in the simulation of decanano MOSFETs A Asenov, AR Brown, JR Watling Solid-State Electronics 47 (7), 1141-1145, 2003 | 66 | 2003 |
a asenovThe University of Glasgow在 glasgow.ac.uk 的电子邮件经过验证
