| An innovative air quality monitoring system based on drone and IoT enabling technologies L Angrisani, A Amodio, P Arpaia, M Asciolla, A Bellizzi, F Bonavolontà, ... 2019 IEEE international workshop on metrology for agriculture and forestry …, 2019 | 33 | 2019 |
| Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses G Borghello, E Lerario, F Faccio, HD Koch, G Termo, S Michelis, ... Microelectronics Reliability 116, 114016, 2021 | 28 | 2021 |
| Effects of bias and temperature on the dose-rate sensitivity of 65-nm CMOS transistors G Borghello, F Faccio, G Termo, S Michelis, S Costanzo, HD Koch, ... IEEE Transactions on Nuclear Science 68 (5), 573-580, 2021 | 19 | 2021 |
| Strategic R&D; Programme on Technologies for Future Experiments-Annual Report 2020 G Aglieri, PV Leitao, J Hahnfeld, P Collins, D Janssens, L Martinazzoli, ... | 15 | 2020 |
| Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics W Snoeys, G Aglieri Rinella, A Andronic, M Antonelli, R Baccomi, ... POS PROCEEDINGS OF SCIENCE, 2023 | 14 | 2023 |
| Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology W Deng, GA Rinella, M Aresti, J Baudot, F Benotto, S Beole, W Bialas, ... Journal of Instrumentation 18 (01), C01065, 2023 | 7 | 2023 |
| Radiation-induced charge trapping in shallow trench isolations of FinFETs S Bonaldo, T Wallace, H Barnaby, G Borghello, G Termo, F Faccio, ... IEEE Transactions on Nuclear Science 71 (4), 427-436, 2023 | 5 | 2023 |
| Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics GA Rinella, A Andronic, M Antonelli, R Baccomi, R Ballabriga, M Barbero, ... POS PROCEEDINGS OF SCIENCE 420, 083-083, 2023 | 4 | 2023 |
| Measurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias AD Martin, R Ballabriga, G Borghello, M Campbell, W Deng, GH Hong, ... Journal of Instrumentation 18 (02), C02036, 2023 | 3 | 2023 |
| Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID G Termo, G Borghello, F Faccio, S Michelis, A Koukab, JM Sallese Journal of Instrumentation 18 (01), C01061, 2023 | 2 | 2023 |
| Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications G Termo, G Borghello, F Faccio, S Michelis, A Koukab, JM Sallese Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2024 | 1 | 2024 |
| Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator G Termo, G Borghello, F Faccio, K Kloukinas, M Caselle, AF Elsenhans, ... Journal of Instrumentation 19 (03), C03039, 2024 | 1 | 2024 |
| Extension of the R&D; Programme on Technologies for Future Experiments C Joram, G Aglieri, GA Stewart, PV Leitao, F Reidt, N Kratochwil, P Collins, ... | 1 | 2023 |
| TOPICAL WORKSHOP ON ELECTRONICS FOR PARTICLE PHYSICS GEREMEAS, SARDINIA, ITALY 1-6 OCTOBER 2023 G Termo, G Borghello, F Faccio, K Kloukina, M Caselle, AF Elsenhans, ... JOURNAL OF INSTRUMENTATION 19 (3), 2024 | | 2024 |
| Reliability of Advanced Nanoscale CMOS Technology for High-Radiation Environments G Termo EPFL, 2024 | | 2024 |
| Neutron-and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023) G Termo, G Borghello, F Faccio, S Michelis, A Koukab, JM Sallese 2023 23rd European Conference on Radiation and Its Effects on Components and …, 2023 | | 2023 |
| Measurements of Total Ionizing Dose Effects in TPSCo 65 nm and Influence of NMOS Bulk Bias A Dorda, R Ballabriga, G Borghello, M Campbell, W Deng, GH Hong, ... | | 2022 |
| Annual Report 2023 and Phase-I Closeout G Aglieri Rinella, J De Boer, N Kratochwil, P Collins, D Janssens, ... | | |
| Strategic R&D; Programme on Technologies for Future Experiments-Annual Report 2021 G Aglieri Rinella, M Lisowska, N Kratochwil, A Himmerlich, P Dorosz, ... | | |
