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Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire R Jinno, CS Chang, T Onuma, Y Cho, ST Ho, D Rowe, MC Cao, K Lee, ... Science Advances 7 (2), eabd5891, 2021 | 95 | 2021 |
The new nitrides: Layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system D Jena, R Page, J Casamento, P Dang, J Singhal, Z Zhang, J Wright, ... Japanese Journal of Applied Physics 58 (SC), SC0801, 2019 | 89 | 2019 |
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Near-bandgap wavelength dependence of long-lived traveling coherent longitudinal acoustic phonons in GaSb-GaAs heterostructures JK Miller, J Qi, Y Xu, YJ Cho, X Liu, JK Furdyna, I Perakis, TV Shahbazyan, ... Physical Review B—Condensed Matter and Materials Physics 74 (11), 113313, 2006 | 76 | 2006 |
Carrier-Mediated Antiferromagnetic Interlayer Exchange Coupling <?format ?>in Diluted Magnetic Semiconductor Multilayers JH Chung, SJ Chung, S Lee, BJ Kirby, JA Borchers, YJ Cho, X Liu, ... Physical review letters 101 (23), 237202, 2008 | 75 | 2008 |
Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy A Summerfield, A Davies, TS Cheng, VV Korolkov, YJ Cho, CJ Mellor, ... Scientific reports 6 (1), 22440, 2016 | 63 | 2016 |
Integrated nano-opto-electro-mechanical sensor for spectrometry and nanometrology Ž Zobenica, RW van der Heijden, M Petruzzella, F Pagliano, R Leijssen, ... Nature communications 8 (1), 2216, 2017 | 59 | 2017 |
Dynamically controlling the emission of single excitons in photonic crystal cavities F Pagliano, YJ Cho, T Xia, F Van Otten, R Johne, A Fiore Nature communications 5 (1), 5786, 2014 | 56 | 2014 |
Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy R Page, J Casamento, Y Cho, S Rouvimov, HG Xing, D Jena Physical Review Materials 3 (6), 064001, 2019 | 48 | 2019 |
Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ... Applied Physics Letters 119 (6), 2021 | 45 | 2021 |
Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates K Lee, YJ Cho, LJ Schowalter, M Toita, HG Xing, D Jena Applied Physics Letters 116 (26), 2020 | 37 | 2020 |
Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning YJ Cho, CS Chang, K Lee, M Gong, K Nomoto, M Toita, LJ Schowalter, ... Applied Physics Letters 116 (17), 2020 | 37 | 2020 |
Definitive evidence of interlayer coupling between Ga_ {1− x} Mn_ {x} As layers separated by a nonmagnetic spacer BJ Kirby, JA Borchers, X Liu, Z Ge, YJ Cho, M Dobrowolska, JK Furdyna Physical Review B 76 (20), 205316, 2007 | 33 | 2007 |
Moiré-modulated conductance of hexagonal boron nitride tunnel barriers A Summerfield, A Kozikov, TS Cheng, A Davies, YJ Cho, AN Khlobystov, ... Nano letters 18 (7), 4241-4246, 2018 | 31 | 2018 |
Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3 M Hilfiker, R Korlacki, R Jinno, Y Cho, HG Xing, D Jena, U Kilic, M Stokey, ... Applied Physics Letters 118 (6), 2021 | 30 | 2021 |
High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire TS Cheng, A Davies, A Summerfield, YJ Cho, I Cebula, RJA Hill, ... Journal of Vacuum Science & Technology B 34 (2), 2016 | 29 | 2016 |
Effects of donor doping on Ga1− xMnxAs YJ Cho, KM Yu, X Liu, W Walukiewicz, JK Furdyna Applied Physics Letters 93 (26), 2008 | 29 | 2008 |
Investigation of magnetic and electronic coupling between two (Ga, Mn) As layers in (Ga, Mn) As∕ GaAs∕(Ga, Mn) As magnetic tunnel junctions Z Ge, YY Zhou, YJ Cho, X Liu, JK Furdyna, M Dobrowolska Applied Physics Letters 91 (15), 2007 | 25 | 2007 |