| Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020 | 940 | 2020 |
| Defect-Dominated Doping and Contact Resistance in MoS2 S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014 | 912 | 2014 |
| GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 494 | 2008 |
| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 428 | 2016 |
| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013 | 331 | 2013 |
| Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science 362 (6415), 665-670, 2018 | 319 | 2018 |
| Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ... Applied Physics Letters 94 (16), 2009 | 318 | 2009 |
| Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ... ACS nano 9 (9), 9124-9133, 2015 | 308 | 2015 |
| A roadmap for electronic grade 2D materials N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ... 2D Materials 6 (2), 022001, 2019 | 283 | 2019 |
| HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015 | 259 | 2015 |
| van der Waals epitaxy: 2D materials and topological insulators LA Walsh, CL Hinkle Applied Materials Today 9, 504-515, 2017 | 218 | 2017 |
| Half-cycle atomic layer deposition reaction studies of Al2O3 on In0. 2Ga0. 8As (100) surfaces M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (20), 2008 | 192 | 2008 |
| Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016 | 167 | 2016 |
| MoS2–Titanium Contact Interface Reactions S McDonnell, C Smyth, CL Hinkle, RM Wallace ACS applied materials & interfaces 8 (12), 8289-8294, 2016 | 161 | 2016 |
| Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications CL Hinkle, EM Vogel, PD Ye, RM Wallace Current Opinion in Solid State and Materials Science 15 (5), 188-207, 2011 | 160 | 2011 |
| Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ... 2D Materials 4 (4), 045019, 2017 | 153 | 2017 |
| Investigation of postoxidation thermal treatments of interface in relationship to the kinetics of amorphous Si suboxide decomposition BJ Hinds, F Wang, DM Wolfe, CL Hinkle, G Lucovsky Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 137 | 1998 |
| Progression of solid electrolyte interphase formation on hydrogenated amorphous silicon anodes for lithium-ion batteries DE Arreaga-Salas, AK Sra, K Roodenko, YJ Chabal, CL Hinkle The Journal of Physical Chemistry C 116 (16), 9072-9077, 2012 | 136 | 2012 |
| Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4) 2S passivated GaAs (100) surfaces M Milojevic, CL Hinkle, FS Aguirre-Tostado, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (25), 2008 | 136 | 2008 |
| High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ... Advanced Materials 30 (36), 1803109, 2018 | 127 | 2018 |
Robert M. WallaceUniversity of Texas at Dallas在 utdallas.edu 的电子邮件经过验证
