Molecular beam epitaxial growth of AlN thin films on Si through exploiting low Al adatom migration and the nitrogen-rich environment on a nanowire template X Yin, Q Zhang, S Zhao Crystal Growth & Design 21 (7), 3645-3649, 2021 | 20 | 2021 |
Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer Q Zhang, H Parimoo, E Martel, S Zhao Scientific Reports 12 (1), 7230, 2022 | 12 | 2022 |
Recent progress on aluminum gallium nitride deep ultraviolet lasers by molecular beam epitaxy Q Zhang, X Yin, S Zhao physica status solidi (RRL)–Rapid Research Letters 15 (7), 2100090, 2021 | 11 | 2021 |
Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate Q Zhang, X Yin, E Martel, S Zhao Materials Science in Semiconductor Processing 135, 106099, 2021 | 10 | 2021 |
AlGaN nanowire deep ultraviolet light emitting diodes with graphene electrode H Parimoo, Q Zhang, M Vafadar, J Sivasundarampillai, S Zhao Applied Physics Letters 120 (17), 2022 | 8 | 2022 |
Comparative Apex Electrostatics of Atom Probe Tomography Specimens Q Zhang, B Klein, N Sanford, A Chiaramonti Journal of Electronic Materials, 2021 | 5 | 2021 |
Molecular beam epitaxy of AlGaN epilayers on Si for vertical deep ultraviolet light-emitting diodes Q Zhang, H Parimoo, E Martel, S Zhao ECS Journal of Solid State Science and Technology 11 (11), 116002, 2022 | 4 | 2022 |
Vertical AlGaN Deep Ultraviolet Light Emitting Diodes with Polarization Enhanced p-AlGaN Epilayer on Si Substrate Q Zhang, H Parimoo, E Martel, X Yin, S Zhao ECS Journal of Solid State Science and Technology 11 (6), 066003, 2022 | 4 | 2022 |
Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications M Yu, M Hilse, Q Zhang, Y Liu, Z Wang, S Law ACS Applied Nano Materials, 2024 | 2 | 2024 |
Direct Observation of Al Migration Enhancement by Changing the Al and N Source Relative Position in the Molecular Beam Epitaxy of AlGaN Nanowires MF Vafadar, Q Zhang, S Zhao Crystal Growth & Design 23 (5), 3091-3097, 2023 | 2 | 2023 |
Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template Q Zhang, J Sivasundarampillai, H Parimoo, S Zhao ACS Applied Optical Materials 1 (3), 652-659, 2023 | 2 | 2023 |
Recent progress on molecular beam epitaxy of AlGaN nanowires for deep ultraviolet light emitting devices S Zhao, Q Zhang, H Parimoo, X Yin ECS Transactions 108 (6), 3, 2022 | 2 | 2022 |
Effect of substrate rotation speed on AlGaN nanowire deep ultraviolet light-emitting diodes by molecular beam epitaxy MF Vafadar, RB Arif, Q Zhang, S Zhao Journal of Vacuum Science & Technology B 41 (3), 2023 | 1 | 2023 |
Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111) A Substrates by Molecular Beam Epitaxy Q Zhang, M Hilse, W Auker, J Gray, S Law arXiv preprint arXiv:2406.15248, 2024 | | 2024 |
Ga Desorption Kinetics in the Molecular Beam Epitaxy of AlGaN Nanowires for Ultrashort Wavelength Light-Emitting Diodes Q Zhang, H Yuan, MF Vafadar, GA Botton, S Zhao Crystal Growth & Design, 2024 | | 2024 |
Substrate for semiconductor device, semiconductor component and method of manufacturing same S ZHAO, Q Zhang US Patent App. 18/550,708, 2024 | | 2024 |
Vertical, Surface-emitting, Human-safe-wavelength semiconductor UV LEDs with AlGaN nanowires (Conference Presentation) S Zhao, Q Zhang, X Yin, H Parimoo, M Vafadar Light-Emitting Devices, Materials, and Applications XXVII, PC124410B, 2023 | | 2023 |
Molecular Beam Epitaxial Growth and Characterization of AlGaN Epilayers for Vertical Deep Ultraviolet LEDs on Silicon Q Zhang McGill University (Canada), 2023 | | 2023 |
AlGaN Deep UV LEDs on Si Exploiting a Nanowire-assisted AlN Buffer Layer QD Zhang, H Parimoo, S Zhao 2022 Photonics North (PN), 1-1, 2022 | | 2022 |
Polarity Control of Nanowire-template-assisted AlN Epilayers on Si by Molecular Beam Epitaxy QD Zhang, X Yin, S Zhao 2022 Photonics North (PN), 1-1, 2022 | | 2022 |