| GaN transistor characteristics at elevated temperatures A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ... Journal of Applied Physics 106 (7), 2009 | 92 | 2009 |
| Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ... Journal of Applied Physics 113 (17), 2013 | 81 | 2013 |
| The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si (111) N Baron, Y Cordier, S Chenot, P Vennéguès, O Tottereau, M Leroux, ... Journal of Applied Physics 105 (3), 2009 | 64 | 2009 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 2011 | 61 | 2011 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si (110) Y Cordier, JC Moreno, N Baron, E Frayssinet, S Chenot, B Damilano, ... IEEE electron device letters 29 (11), 1187-1189, 2008 | 61 | 2008 |
| Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ... Applied Physics Letters 94 (23), 2009 | 56 | 2009 |
| AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Y Cordier, M Azize, N Baron, S Chenot, O Tottereau, J Massies Journal of crystal growth 309 (1), 1-7, 2007 | 38 | 2007 |
| Growth of GaN based structures on Si (1 1 0) by molecular beam epitaxy Y Cordier, JC Moreno, N Baron, E Frayssinet, JM Chauveau, M Nemoz, ... Journal of crystal growth 312 (19), 2683-2688, 2010 | 36 | 2010 |
| High temperature behaviour of GaN HEMT devices on Si (111) and sapphire substrates R Cuerdo, F Calle, AF Braña, Y Cordier, M Azize, N Baron, S Chenot, ... physica status solidi c 5 (6), 1971-1973, 2008 | 33 | 2008 |
| Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET A Fontserè, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ... Microelectronic engineering 88 (10), 3140-3144, 2011 | 31 | 2011 |
| In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Y Cordier, N Baron, F Semond, J Massies, M Binetti, B Henninger, ... Journal of crystal growth 301, 71-74, 2007 | 28 | 2007 |
| Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Y Cordier, N Baron, S Chenot, P Vennéguès, O Tottereau, M Leroux, ... Journal of crystal growth 311 (7), 2002-2005, 2009 | 27 | 2009 |
| Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale A Fontserè, A Perez-Tomas, M Placidi, J Llobet, N Baron, S Chenot, ... Applied physics letters 101 (9), 2012 | 23 | 2012 |
| Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Y Cordier, M Azize, N Baron, Z Bougrioua, S Chenot, O Tottereau, ... Journal of crystal growth 310 (5), 948-954, 2008 | 23 | 2008 |
| Investigation of AlGaN∕ AlN∕ GaN heterostructures for magnetic sensor application from liquid helium temperature to 300° C L Bouguen, S Contreras, B Jouault, L Konczewicz, J Camassel, Y Cordier, ... Applied Physics Letters 92 (4), 2008 | 22 | 2008 |
| Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance A Pérez-Tomás, A Fontsere, M Placidi, N Baron, S Chenot, JC Moreno, ... Semiconductor Science and Technology 27 (12), 125010, 2012 | 21 | 2012 |
| Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Nanotechnology 23 (39), 395204, 2012 | 18 | 2012 |
| Bulk temperature impact on the AlGaN/GaN HEMT forward current on Si, sapphire and free-standing GaN A Fontserè, A Pérez-Tomás, M Placidi, N Baron, S Chenot, JC Moreno, ... ECS Solid State Letters 2 (1), P4, 2012 | 16 | 2012 |
| AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si (110): comparisons with Si (111) and Si (001) Y Cordier, JC Moreno, N Baron, E Frayssinet, S Chenot, B Damilano, ... physica status solidi c 6 (S2 2), S1020-S1023, 2009 | 15 | 2009 |
| Optimisation de l'épitaxie sous jets moléculaires d'hétérostructures à base de GaN: application aux transistors à haute mobilité d'électrons sur substrat silicium N Baron Université Nice Sophia Antipolis, 2009 | 8 | 2009 |
Yvon CordierDirecteur de Recherche, CNRS在 crhea.cnrs.fr 的电子邮件经过验证
Yvon CordierDirecteur de Recherche, CNRS在 crhea.cnrs.fr 的电子邮件经过验证